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Patent Searching and Data


Title:
CHEMICAL MECHANICAL POLISH PROCESS METHOD AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/212981
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a chemical mechanical polish process method and a device, relating to the technical field of semiconductor manufacturing. The method comprises: providing a substrate on which a dielectric layer and a conductive layer are formed, and carrying out chemical mechanical polish on the substrate placed on a polish disc by using a mixed polish liquid of a first polish liquid and a second polish liquid, so as to remove the conductive layer covering the upper surface of the dielectric layer; washing the substrate placed on the polish disc by using a cleaning liquid; and then carrying out chemical mechanical polish on the substrate placed on the polish disc by using the second polish liquid so as to remove part of the dielectric layer and enable the upper surface of the dielectric layer to be lower than the upper surface of the conductive layer filling a groove, thus the conductive layer in the groove can protrude out of the surface of the dielectric layer, and the product yield of the CMP process based on a single polish disc is increased.

Inventors:
BAO YU (CN)
Application Number:
PCT/CN2022/092954
Publication Date:
November 09, 2023
Filing Date:
May 16, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
B24B37/04; B24B37/10; B24B37/34; B24B55/06
Domestic Patent References:
WO2009128494A12009-10-22
Foreign References:
CN112201619A2021-01-08
CN109986456A2019-07-09
CN114121647A2022-03-01
CN110690163A2020-01-14
CN108214108A2018-06-29
JP2004128112A2004-04-22
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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