Title:
CHIP BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/121121
Kind Code:
A1
Abstract:
Provided is a chip bonding method. A back wiring structure can be formed on the back face of a device wafer by coating the front face of the device wafer with a bonding glue and bonding same to a carrier wafer, so as to lead an interconnection structure in the device wafer out from the back of the device wafer, such that the front face of a chip can be bonded to a target wafer. In addition, after the device wafer is debonded from the carrier wafer, the bonding glue on the front face of the device wafer is reserved, and the bonding glue can protect the front face of the device wafer during subsequent dicing of the device wafer, thereby preventing particles or etching byproducts generated in the dicing process from adhering to the front face of the device wafer. Etching byproducts on the bonding glue can be synchronously removed during the subsequent removal of the bonding glue. Therefore, the cleanliness of the front face of a single chip produced after dicing is ensured, and the bonding effect of bonding the front face of a chip to a target wafer can be improved.
Inventors:
GUO WANLI (CN)
LIU TIANJIAN (CN)
LIU TIANJIAN (CN)
Application Number:
PCT/CN2021/078279
Publication Date:
June 16, 2022
Filing Date:
February 26, 2021
Export Citation:
Assignee:
WUHAN XINXIN SEMICONDUCTOR MFG (CN)
International Classes:
H01L21/683
Foreign References:
| CN111009541A | 2020-04-14 | |||
| CN108074823A | 2018-05-25 | |||
| CN106800272A | 2017-06-06 | |||
| CN105185798A | 2015-12-23 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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