Title:
CHIP AND MANUFACTURING METHOD THEREFOR, RADIO FREQUENCY POWER AMPLIFIER AND TERMINAL
Document Type and Number:
WIPO Patent Application WO/2023/159589
Kind Code:
A1
Abstract:
Embodiments of the present application relate to the technical field of semiconductors, and provide a chip and a manufacturing method therefor, a radio frequency power amplifier and a terminal, capable of ensuring that an epitaxial layer is in full contact with a source conductive layer. The chip comprises a first transistor and a second transistor. The method comprises: forming an epitaxial layer (11) and a source conductive layer (21) which are sequentially stacked on a substrate (10), wherein the epitaxial layer comprises a first through hole, so as to form a first epitaxial layer (101) of the first transistor and a second epitaxial layer (102) of the second transistor, the source conductive layer comprises a first source (211) of the first transistor and a second source (212) of the second transistor, the edge of the first source (211) is flush with the edge at the side of the first epitaxial layer (101) close to the first through hole, and the edge of the second source (212) is flush with the edge at the side of the second epitaxial layer (102) close to the first through hole; forming a first conductive layer (13) in the first through hole, wherein the first conductive layer (13) is in contact with the first source (211) and the second source (212); forming a second through hole; and forming a second conductive layer (14) in the second through hole, wherein the second conductive layer (14) is in contact with the first conductive layer (13) and grounded.
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Inventors:
LI SHUIMING (CN)
LI HAIJUN (CN)
ZHANG ZHILI (CN)
LIU TAO (CN)
RAO JIN (CN)
LI HAIJUN (CN)
ZHANG ZHILI (CN)
LIU TAO (CN)
RAO JIN (CN)
Application Number:
PCT/CN2022/078378
Publication Date:
August 31, 2023
Filing Date:
February 28, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/335; H01L29/768; H01L29/772
Foreign References:
| US20120286878A1 | 2012-11-15 | |||
| US20170069619A1 | 2017-03-09 | |||
| CN107578992A | 2018-01-12 | |||
| CN101467265A | 2009-06-24 | |||
| CN106252310A | 2016-12-21 | |||
| CN108172563A | 2018-06-15 |
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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