Title:
CLEANING METHOD, SEMICONDUCTOR DEVICE PRODUCTION METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2019/163295
Kind Code:
A1
Abstract:
The invention comprises a step, after a process to form a film over a substrate has been executed inside a processing container, of supplying a cleaning gas into the processing container to eliminate a deposited material adhered inside the processing container. The step of eliminating the deposited material comprises repeating sequentially: a first step wherein the cleaning gas is supplied into the processing container while being exhausted by a vacuum pump so as to maintain a predetermined first pressure; a second step of stopping the cleaning gas supply, and exhausting the cleaning gas and the reaction products of the cleaning gas present inside the processing container; and a third step of maintaining the interior of the processing container at a second pressure that is lower than the first pressure while cooling the exhaust tube connecting the processing container to the vacuum pump. When the exhaust tube temperature is at a second temperature or lower, the third step completes the cooling within a predetermined time without continuing until a first temperature or lower is reached.
Inventors:
MIYASHITA NAOYA (JP)
KURIBAYASHI KOEI (JP)
TANIYAMA TOMOSHI (JP)
KURIBAYASHI KOEI (JP)
TANIYAMA TOMOSHI (JP)
Application Number:
PCT/JP2018/048482
Publication Date:
August 29, 2019
Filing Date:
December 28, 2018
Export Citation:
Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H01L21/31; C23C16/44; H01L21/3065; H01L21/316
Foreign References:
| JP2013153159A | 2013-08-08 | |||
| JP2018026460A | 2018-02-15 | |||
| JP2017069230A | 2017-04-06 | |||
| JP2014216539A | 2014-11-17 | |||
| JP2008147215A | 2008-06-26 | |||
| JP2005150258A | 2005-06-09 | |||
| JP2004289098A | 2004-10-14 | |||
| JP2004197127A | 2004-07-15 | |||
| JP2002222805A | 2002-08-09 |
Attorney, Agent or Firm:
TAIYO, NAKAJIMA & KATO (JP)
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