Title:
Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2013/108520
Kind Code:
A1
Abstract:
A sputtering target which contains, as metal components, 0.5-45 mol% of Cr and the balance of Co, while containing, as non-metal components, two or more oxides including Ti oxide. This sputtering target is characterized in that: the structure thereof is composed of regions where oxides including at least Ti oxide are dispersed in Co (non-Cr regions) and a region where oxides other than Ti oxide are dispersed in Cr or Co-Cr (a Cr region); and the non-Cr regions are scattered about in the Cr region. The present invention addresses the problem of providing a sputtering target for forming a granular film, which suppresses the formation of coarse complex oxide particles and generates less particles during the sputtering.
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Inventors:
SATO ATSUSHI (JP)
IKEDA YUKI (JP)
ARAKAWA ATSUTOSHI (JP)
TAKAMI HIDEO (JP)
NAKAMURA YUICHIRO (JP)
IKEDA YUKI (JP)
ARAKAWA ATSUTOSHI (JP)
TAKAMI HIDEO (JP)
NAKAMURA YUICHIRO (JP)
Application Number:
PCT/JP2012/082131
Publication Date:
July 25, 2013
Filing Date:
December 12, 2012
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
G11B5/851; B22F1/12; B22F9/04; C22C1/05; C22C19/07; C22C32/00; C23C14/34
Foreign References:
| JP2010272177A | 2010-12-02 | |||
| JP2011208169A | 2011-10-20 | |||
| JP2011175725A | 2011-09-08 |
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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Claims: