Title:
COIL STRUCTURE FOR GENERATING PLASMA AND SEMICONDUCTOR PROCESS DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/280196
Kind Code:
A1
Abstract:
A coil structure (2, 2') for generating plasma and a semiconductor process device. The coil structure (2, 2') comprises at least one coil group; the coil group comprises a first sub-coil group and a second sub-coil group arranged coaxially; the first sub-coil group comprises at least one first planar coil (21) located in a first plane, and the second sub-coil group comprises at least one second planar coil (22) located in a second plane parallel to the first plane; the first planar coil (21) is connected in series to the second planar coil (22); and the orthographic projection of the second planar coil (22) on the first plane is mirror-symmetrical or mirror-asymmetrical to the first planar coil (21). The coil structure (2, 2') for generating plasma and the semiconductor process device can compensate for the difference in the current distribution of a coil in the radial direction to improve the distribution uniformity of the coupling energy generated below the coil in the radial direction, thereby improving the distribution uniformity of the radical and ion densities in the plasma in the radial direction.
Inventors:
ZHAO JINRONG (CN)
WANG SONG (CN)
WEI GANG (CN)
CHEN XING (CN)
XU JINJI (CN)
ZHANG YING (CN)
WANG SONG (CN)
WEI GANG (CN)
CHEN XING (CN)
XU JINJI (CN)
ZHANG YING (CN)
Application Number:
PCT/CN2022/104068
Publication Date:
January 12, 2023
Filing Date:
July 06, 2022
Export Citation:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTD (CN)
International Classes:
H05H1/46
Foreign References:
| CN111785605A | 2020-10-16 | |||
| CN111192752A | 2020-05-22 | |||
| CN101136279A | 2008-03-05 | |||
| CN102598201A | 2012-07-18 | |||
| CN101515498A | 2009-08-26 | |||
| JP2015026464A | 2015-02-05 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
Download PDF: