COMPACT THREE-DIMENSIONAL MEMORY - CHENGDU HAICUN IP TECHNOLOGY LLC

Title:

COMPACT THREE-DIMENSIONAL MEMORY

Document Type and Number:

WIPO Patent Application WO/2015/158229

Kind Code:

A1

Abstract:

The present invention provides a compact three-dimensional memory (3D-M C). By forming a simple switching device on an address line, contact channel holes can be shared by address lines in the same storage layer or in different storage layers. Therefore, the contact channel holes become sparser and sparse channel holes are obtained. The sparse channel holes are significant to the implementation of a three-dimensional integrated circuit (3D-IC).

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Inventors:

ZHANG GUOBIAO (CN)

Application Number:

PCT/CN2015/076425

Publication Date:

October 22, 2015

Filing Date:

April 13, 2015

Export Citation:

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Assignee:

CHENGDU HAICUN IP TECHNOLOGY LLC (CN)

International Classes:

H01L27/115

Foreign References:

CN1212452A	1999-03-31
CN1485925A	2004-03-31
CN1505160A	2004-06-16
CN1774807A	2006-05-17
US6861715B2	2005-03-01

Attorney, Agent or Firm:

CHENGDU CENTRAL ASIA PATENT AGENCY CO.,LTD (CN)
成都中亚专利代理有限公司 (CN)

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