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Title:
COMPOSITE OPTICAL LITHOGRAPHY METHOD FOR PATTERNING LINES OF UNEQUAL WIDTH
Document Type and Number:
WIPO Patent Application WO2005043249
Kind Code:
A3
Abstract:
A composite patterning technique may include two lithography processes. A first lithography process may use interference lithography to form an interference pattern of lines of substantially equal width and spaces on a photoresist. A second lithography process may use one or more non-interference lithography techniques, such as optical lithography, imprint lithography and electron-beam lithography, to break continuity of the patterned lines and form desired integrated circuit features.

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Inventors:
BORODOVSKY YAN (US)
Application Number:
PCT/US2004/034599
Publication Date:
September 15, 2005
Filing Date:
October 18, 2004
Export Citation:
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Assignee:
INTEL CORP (US)
BORODOVSKY YAN (US)
International Classes:
G03F7/20; (IPC1-7): G03F7/20
Domestic Patent References:
WO2005036273A22005-04-21
Foreign References:
US5705321A1998-01-06
EP0915384A21999-05-12
US20030091940A12003-05-15
EP0964305A11999-12-15
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