COMPOSITE SUBSTRATE STRUCTURE AND MORPHOLOGY IMPROVEMENT METHOD THEREFOR

WIPO Patent Application WO/2023/077558

A1

The present invention relates to the technical field of semiconductor material processing, and in particular to a composite substrate structure and a morphology improvement method therefor. The structure comprises a first stress-balancing layer, a substrate layer, a second stress-balancing layer, a dielectric layer and a functional film layer, which are arranged sequentially, wherein the first stress-balancing layer and the second stress-balancing layer are made of the same material and are manufactured by means of the same process; the first stress-balancing layer is used for adjusting the thickness of the first stress-balancing layer according to stress distribution in the composite substrate structure, so that the morphology of the composite substrate structure is improved; and the second stress-balancing layer is used for balancing stress generated when the first stress-balancing layer is manufactured. In the composite substrate structure, the first stress-balancing layer is arranged on a back face of the substrate layer and serves as a stress compensation layer, such that when a heterogeneous integrated substrate is prepared, the morphology of a wafer is optimized by adjusting the thickness of the first stress-balancing layer, thereby making the overall morphology of the heterogeneous wafer more beneficial to subsequent tape-out processing.

OU XIN (CN)
CHEN YANG (CN)
HUANG KAI (CN)

PCT/CN2021/130855

May 11, 2023

November 16, 2021

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SHANGHAI NOVEL SI INTEGRATION TECH CO LTD (CN)

H01L21/02; H01L21/18; H01L29/06

CN110828298A	2020-02-21
CN113224187A	2021-08-06
CN112951708A	2021-06-11
CN112701033A	2021-04-23
CN106449912A	2017-02-22
US20100291761A1	2010-11-18

SCIHEAD IP LAW FIRM (CN)

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