Title:
COMPOSITE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/125722
Kind Code:
A1
Abstract:
This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m∙K and a volume resistivity of at least 1×108 Ω∙cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.
Inventors:
KAWAI MAKOTO (JP)
KONISHI SHIGERU (JP)
KONISHI SHIGERU (JP)
Application Number:
PCT/JP2015/054085
Publication Date:
August 27, 2015
Filing Date:
February 16, 2015
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
H01L21/02; H01L27/12
Domestic Patent References:
| WO2013094665A1 | 2013-06-27 | |||
| WO2009011152A1 | 2009-01-22 |
Foreign References:
| JP2001064080A | 2001-03-13 | |||
| JP2010278160A | 2010-12-09 |
Other References:
See also references of EP 3109893A4
Attorney, Agent or Firm:
KOJIMA Takashi et al. (JP)
Takashi Kojima (JP)
Takashi Kojima (JP)
Download PDF:
Previous Patent: CHARGE-TRANSPORTING VARNISH
Next Patent: PRESS-FORMING METHOD, METHOD FOR MANUFACTURING PRESSED PRODUCT, AND PRESS-FORMING DEVICE
Next Patent: PRESS-FORMING METHOD, METHOD FOR MANUFACTURING PRESSED PRODUCT, AND PRESS-FORMING DEVICE