Title:
COMPOSITION, COMPOUND, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2024/029292
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method for manufacturing a semiconductor substrate using a composition capable of forming a film having excellent etching resistance; and to provide said composition. The composition according to the present invention comprises a solvent and a compound having a partial structure represented by formula (1) below, wherein the molecular weight of the compound is greater than or equal to 600. (In formula (1), Ar1 is a substituted or unsubstituted monovalent aromatic group having 5-30 ring members. n is an integer of 1-3. Ar2 is a portion of a substituted or unsubstituted aromatic ring structure having 5-60 ring members and is formed together with two adjacent carbon atoms in formula (1). X1 represents a single bond or a divalent linking group .Each * is a bonding site with the two adjacent carbon atoms constituting the substituted or unsubstituted aromatic ring having 5-60 ring members. ** is a bonding site with a portion other than the partial structure represented by formula (1) in the abovementioned compound. r is an integer of 0-4.)
Inventors:
ABE SHINYA (JP)
KATAGIRI TAKASHI (JP)
NAGANAWA ATSUKO (JP)
YAMADA SHUHEI (JP)
NAKATSU HIROKI (JP)
MIYAUCHI HIROYUKI (JP)
KATAGIRI TAKASHI (JP)
NAGANAWA ATSUKO (JP)
YAMADA SHUHEI (JP)
NAKATSU HIROKI (JP)
MIYAUCHI HIROYUKI (JP)
Application Number:
PCT/JP2023/025665
Publication Date:
February 08, 2024
Filing Date:
July 12, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; C07C13/58; C07C13/62; C07C13/66; C07C39/17; C07D487/04; H01L21/027
Domestic Patent References:
| WO2018164267A1 | 2018-09-13 |
Foreign References:
| JP2008076850A | 2008-04-03 | |||
| JP2004143426A | 2004-05-20 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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