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Title:
COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, METHOD OF FORMING PATTERN AND RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2012/117948
Kind Code:
A1
Abstract:
The present invention provides a composition for formation of a resist under-layer film which uses a multilayer resist process which includes a process of forming a silicon oxide film on the surface of the resist under-layer film and wet-etching the silicon oxide film, wherein the composition for formation of a resist under-layer film includes an [A] polymer having the glass transition temperature (Tg) between 0°C or more and 180°C or less. The [A] polymer preferably includes a structural unit (I) which is represented by formula (1) described below, where R1 means a hydrogen atom, a fluorine atom, or methyl. E means an oxygen atom, -CO-O-* or -CO-NH-*, where * represents a binding site with R2. R2 represents a univalent hydrocarbon radical.

Inventors:
MINEGISHI SHIN-YA (JP)
KOUMURA KAZUHIKO (JP)
NAKAFUJI SHIN-YA (JP)
NAKANO TAKANORI (JP)
Application Number:
PCT/JP2012/054471
Publication Date:
September 07, 2012
Filing Date:
February 23, 2012
Export Citation:
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Assignee:
JSR CORP (JP)
MINEGISHI SHIN-YA (JP)
KOUMURA KAZUHIKO (JP)
NAKAFUJI SHIN-YA (JP)
NAKANO TAKANORI (JP)
International Classes:
G03F7/11; C08F212/02; C08F220/18; C08G8/08; C08G10/06; G03F7/033; G03F7/26; H01L21/027
Domestic Patent References:
WO2008038544A12008-04-03
Foreign References:
JP2010520930A2010-06-17
JP2000294504A2000-10-20
JP2010026221A2010-02-04
JP2009251130A2009-10-29
Attorney, Agent or Firm:
AMANO KAZUNORI (JP)
Kazuki Amano (JP)
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