COMPOSITION FOR FORMING ANTI-REFLECTION COATING

Title:

COMPOSITION FOR FORMING ANTI-REFLECTION COATING

Document Type and Number:

WIPO Patent Application WO/2003/071357

Kind Code:

A1

Abstract:

A composition for forming an anti-reflection coating usable in a lithography process for manufacturing a semiconductor device, which comprises a polymer compound containing a halogen atom; a method for adjusting the damping coefficient of the anti-reflection coating which comprises changing the content of the halogen atom in the polymer compound; and an anti-reflection coating prepared from the composition. The polymer compound preferably has a halogen atom introduced into the main chain thereof and/or a side chain connected with the main chain. The anti-reflection coating can be used in a lithography process using an irradiation light of F2-excimer laser (wave length: 157 nm), exhibits high effect of preventing the reflection of the light, and does not cause the intermixing with a resist layer.

Inventors:

SAKAMOTO RIKIMARU (JP)
MIZUSAWA KEN-ICHI (JP)

Application Number:

PCT/JP2003/001542

Publication Date:

August 28, 2003

Filing Date:

February 14, 2003

Export Citation:

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Assignee:

NISSAN CHEMICAL IND LTD (JP)
SAKAMOTO RIKIMARU (JP)
MIZUSAWA KEN-ICHI (JP)

International Classes:

G02B1/11; G02B1/111; G03F7/09; (IPC1-7): G03F7/11; C09D201/04; H01L21/027

Foreign References:

JPH11194499A	1999-07-21
EP1035442A2	2000-09-13
JP2002296789A	2002-10-09
US20030064534A1	2003-04-03

Other References: