Title:
COMPOSITION FOR FORMING CHEMICAL-RESISTANT PROTECTIVE FILM HAVING CATECHOL GROUP
Document Type and Number:
WIPO Patent Application WO/2023/095461
Kind Code:
A1
Abstract:
The present invention provides a composition for forming a protective film, the composition being capable of forming a protective film that has excellent resistance to a wet etching liquid for semiconductors such as a basic hydrogen peroxide solution and an acidic hydrogen peroxide solution. This composition also exhibits excellent resistance to a resist solvent, and can be effectively used for the purpose of forming a resist underlayer film. The present invention provides a composition for forming a protective film against a wet etching liquid for semiconductors, the composition containing (A) a compound represented by formula (A), and (B) a solvent. (In formula (A), n represents an integer of 1 to 10; in cases where n is 2, X represents a sulfinyl group, a sulfonyl group, an ether group or a divalent organic group having 2 to 50 carbon atoms; in cases where n is an integer other than 2, X represents an n-valent organic group having 2 to 50 carbon atoms; Y represents -CH2CH(OH)CH2OC(=O)CH2(CH2)t-, -CH2CH(OH)CH2OC(=O)C(CN)(=CH)-; and t represents an integer of 1 to 6.)
Inventors:
KUBODERA SHUN (JP)
NISHITA TOKIO (JP)
SON GUN (JP)
KISHIOKA TAKAHIRO (JP)
NISHITA TOKIO (JP)
SON GUN (JP)
KISHIOKA TAKAHIRO (JP)
Application Number:
PCT/JP2022/037533
Publication Date:
June 01, 2023
Filing Date:
October 07, 2022
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08F20/28; C07D251/34; C08G59/02; G03F7/11
Domestic Patent References:
| WO2018052130A1 | 2018-03-22 | |||
| WO2022186231A1 | 2022-09-09 |
Foreign References:
| JP2018173521A | 2018-11-08 | |||
| JP2022083466A | 2022-06-06 |
Attorney, Agent or Firm:
TAKAOKA Ryoichi et al. (JP)
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