Title:
COMPOSITION FOR FORMING EUV RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/019248
Kind Code:
A1
Abstract:
The present invention provides: a composition for forming a resist underlayer film that enables the formation of a desired resist pattern; a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses this composition for forming a resist underlayer film. A composition for forming an EUV resist underlayer film, said composition containing an organic solvent and a reaction product of a diepoxy compound and a compound represented by formula (1). (In formula (1), Y1 represents an alkylene group having from 1 to 10 carbon atoms, wherein at least one hydrogen atom is substituted by a fluorine atom; each of T1 and T2 independently represents a hydroxy group or a carboxy group; each of R1 and R2 independently represents an alkyl group having from 1 to 10 carbon atoms, said alkyl group being optionally substituted by a fluorine atom; and each of n1 and n2 independently represents an integer from 0 to 4.)
Inventors:
SHIMIZU SHOU (JP)
MIZUOCHI RYUTA (JP)
TAMURA MAMORU (JP)
MIZUOCHI RYUTA (JP)
TAMURA MAMORU (JP)
Application Number:
PCT/JP2021/026910
Publication Date:
January 27, 2022
Filing Date:
July 19, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G59/40; G03F7/11; G03F7/20; G03F7/26; H01L21/027
Domestic Patent References:
| WO2020026834A1 | 2020-02-06 | |||
| WO2018203464A1 | 2018-11-08 |
Foreign References:
| JP2005352133A | 2005-12-22 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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