Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/030469
Kind Code:
A1
Abstract:
Provided is a novel composition for forming a resist underlayer film, which is reduced in the amount of sublimated substances that contaminate a device, is improved in the in-plane uniform coatability of a film to be coated thereon, exhibits satisfactory resistance to a chemical solution used in a resist under layer film, and can exhibit other satisfactory properties. This composition for forming a resist underlayer film comprises: a solvent; and a polymer containing a unit structure (A) represented by formula (1) (wherein Ar1 and Ar2 independently represent a benzene ring or a naphthalene ring; R1 and R2 independently represent a group substituted by a hydrogen atom on the ring of each of Ar1 and Ar2; R4 is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having 6 to 40 carbon atoms, and a heterocyclic group; R5 is selected from the group consisting of a hydrogen atom, a trifluoromethyl group, an aryl group having 6 to 40 carbon atoms, and a heterocyclic group; and n1 and n2 independently represent an integer of 0 to 3).
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Inventors:
TOKUNAGA HIKARU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
NAKAJIMA MAKOTO (JP)
NISHIMAKI HIROKAZU (JP)
Application Number:
PCT/JP2021/028714
Publication Date:
February 10, 2022
Filing Date:
August 03, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08G12/08; G03F7/11; G03F7/20; G03F7/26
Domestic Patent References:
WO2010147155A1 | 2010-12-23 | |||
WO2018043410A1 | 2018-03-08 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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