COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION

Title:

COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION

Document Type and Number:

WIPO Patent Application WO/2022/210960

Kind Code:

A1

Abstract:

[Problem] To provide a composition for forming a silicon-containing underlayer film whereby it is possible to form a self-organization film in which a desired vertical pattern is induced, and a method for forming a pattern using said composition. [Solution] A composition for forming a silicon-containing underlayer film for a self-organization film, wherein the composition for forming a silicon-containing underlayer film for a self-organization film is characterized by containing [A] a polysiloxane and [B] a solvent and not including a strongly acidic additive.

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Inventors:

SHIGAKI SHUHEI (JP)
MIZUOCHI RYUTA (JP)
TOKUNAGA HIKARU (JP)

Application Number:

PCT/JP2022/016259

Publication Date:

October 06, 2022

Filing Date:

March 30, 2022

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Assignee:

NISSAN CHEMICAL CORP (JP)

International Classes:

C08G77/14; B82Y30/00; B82Y40/00; C08K5/09; C08K5/42; C08L83/04; G03F7/11; G03F7/40

Foreign References:

JP2015516686A	2015-06-11
JP2013230428A	2013-11-14
JP2015166438A	2015-09-24

Attorney, Agent or Firm:

HANABUSA PATENT & TRADEMARK OFFICE (JP)

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