Title:
COMPOSITION, METHOD FOR TREATING SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND COMPOUND
Document Type and Number:
WIPO Patent Application WO/2024/070946
Kind Code:
A1
Abstract:
The present invention provides a composition for semiconductor devices which has the excellent ability to remove dry-etching residues and is more inhibited from causing the dissolution of tungsten and which, when works are treated therewith and then rinsed, is less apt to leave a residue. This composition for semiconductor devices comprises water and a resin comprising repeating unit A, which has a hydroxy group and a specific group selected from the group consisting of a primary amino group, secondary amino group, tertiary amino group, and salts of these, and repeating unit B, which has a functional group having a pKa of 10.0 or less or has a salt thereof.
Inventors:
SHIMOJU NAOYA (JP)
SUGISHIMA YASUO (JP)
TAKAHASHI TOMONORI (JP)
SUGISHIMA YASUO (JP)
TAKAHASHI TOMONORI (JP)
Application Number:
PCT/JP2023/034494
Publication Date:
April 04, 2024
Filing Date:
September 22, 2023
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; C07C217/28; C07C217/32; C07C219/14; C11D3/37
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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