Title:
COMPOSITION FOR POST CHEMICAL-MECHANICAL POLISHING CLEANING
Document Type and Number:
WIPO Patent Application WO/2010/084033
Kind Code:
A3
Abstract:
The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.
Inventors:
KLIPP ANDREAS (DE)
HUNG TING HSU
SU KUOCHEN
TU SHENG-HUNG
HUNG TING HSU
SU KUOCHEN
TU SHENG-HUNG
Application Number:
PCT/EP2010/050078
Publication Date:
January 26, 2012
Filing Date:
January 06, 2010
Export Citation:
Assignee:
BASF SE (DE)
KLIPP ANDREAS (DE)
HUNG TING HSU
SU KUOCHEN
TU SHENG-HUNG
KLIPP ANDREAS (DE)
HUNG TING HSU
SU KUOCHEN
TU SHENG-HUNG
International Classes:
G03F7/42; C11D11/00; C11D7/32; C11D7/50; H01L21/02
Domestic Patent References:
| WO2007104746A1 | 2007-09-20 | |||
| WO2007021085A1 | 2007-02-22 |
Foreign References:
| US20030083215A1 | 2003-05-01 | |||
| US6319885B1 | 2001-11-20 |
Attorney, Agent or Firm:
FITZNER, Uwe (Ratingen, DE)
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