FOR USE IN A LITHIUM ION BATTERY ANODE

[0001] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in its entirety and for all purposes.

BACKGROUND

Field of the Invention

[0002] This invention relates generally to nanostructures, and, more specifically, to multilayered silicon nanowire structures that are useful in battery anodes

[0003] Much work has been done to find a way to use silicon in lithium battery anodes. Silicon holds much promise as it has ten times more lithium capacity than currently-used graphite. But, unfortunately, in absorbing so much lithium, silicon swells by 400%, which usually results in crumbling of the silicon and a short battery lifetime.

SUMMARY

[0004] One aspect of the disclosure relates to an anode for a lithium battery including a substrate; an array of nanowires rooted to the substrate, the nanowires each having a surface; a first layer coating most or all of the surfaces of the nanowires, the layer comprising a SiE _x material; and a second layer over the first layer, any exposed surfaces of the nanowires, and the substrate, the second layer comprising either silicon or a SiF _y material; wherein x greater than zero and less than 1; wherein y is greater than zero and less than 1; and wherein E and F is each selected independently from the group consisting of nitrogen, carbon, boron, phosphorus, oxygen, magnesium, aluminum, germanium, tin, nickel, copper, and combinations thereof. In some embodiment, wherein x is between 0.01 and 0.5, between 0.01 and 0.3, or between 0.01 and 0.1. In some embodiment, wherein y is between 0.01 and 0.5, between 0.01 and 0.3, or between 0.01 and 0.1. Lower values of x and/or y may be used in some embodiments. [0005] In some embodiments, the concentration profile of E varies through a thickness of the first layer and/or the concentration profile of F varies through a thickness of the second layer. In some embodiments, the density of the second layer is greater than the density of the first layer. In some embodiments, the average density of the first layer is less than 2.1 g/cm ³ . In some embodiments, the average density of the second layer is greater than 2.0 g/cm ³ . In some embodiments, the density of the first layer varies throughout the first layer. In some embodiments, the density of the second layer varies throughout the second layer. In some embodiments, the first layer is non-conformal to the nanowire template. In some embodiments, the second layer is conformal to the first layer. In some

embodiments, the anode further includes a third layer over the second layer, the third layer comprising no silicon. In some embodiments, the nanowire template includes silicide nanowires. In some embodiments, the first layer is between about 5 and 20 microns thick at its maximum diameter. In some embodiments, the second layer is between 5 and 500 nanometers thick. In some embodiments, the second layer is between 5 and 100 nanometers thick.

[0006] Another aspect of the disclosure relates to a lithium battery, including an anode as described herein; a lithium-containing cathode; and an electrolyte in ionic communication with both the anode and the cathode.

[0007] Another aspect of the disclosure relates to a method of making an anode for a lithium battery, including providing a substrate; growing nanowires from the substrate, the nanowires each having a surface; using a PECVD method to deposit a first layer to coat most or all of the surfaces of the nanowires, the first layer comprising a first silicon-rich SiE _x ; using a thermal CVD method to deposit a second layer over the first layer, any exposed surfaces of the nanowires, and the substrate, the second layer comprising a second silicon-rich SiE _x .

[0008] In some embodiments, the PECVD method is an expanding thermal plasma method. In some embodiments, the nanowires are silicide nanowires. In some embodiments, chamber pressure during the thermal CVD method is less than about 2 Torr. [0009] These and other aspects of the disclosure are described further below with reference to the Drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The foregoing aspects and others will be readily appreciated by the skilled artisan from the following description of illustrative embodiments when read in conjunction with the accompanying drawings.

[0011] Figure 1 is a schematic illustration of nanowires over which a silicon-based material layer has been deposited using PECVD (plasma enhanced chemical vapor deposition).

[0012] Figure 2 is a schematic illustration of nanowires over which a first silicon- based material layer has been deposited using PECVD and then a second silicon- based material layer has been deposited using thermal CVD, according to an embodiment of the invention.

[0013] Figure 3 shows a schematic depiction of a representation of a non-conformal silicon coating on a template nanowire.

[0014] Figure 4A is schematic representation of a plan view of a partially- assembled electrochemical cell that uses electrodes described herein, according to certain embodiments.

[0015] Figure 4B is schematic representation of a cross-sectional view of an electrode stack of a partially-assembled electrochemical cell that uses electrodes described herein, according to certain embodiments.

[0016] Figures 5A-5C are schematic representations of various views of electrodes wound together with two sheets of separator to form a cell according to certain embodiments.

[0017] Figures 6A and 6B are schematic representations of cross-sectional and perspective views of a stacked cell that includes a plurality of cells according to certain embodiments. [0018] Figure 7 is schematic representation of cross-sectional view of a wound cylindrical cell, in accordance with certain embodiments.

[0019] Figure 8 is a graph that shows capacity retention as a function of cycle index for a silicon anode compared with a SiE _x anode.

DETAILED DESCRIPTION

[0020] Certain embodiments are illustrated in the context of silicon deposition onto silicide nanowires in order to form anode structures for lithium battery cells. The skilled artisan will readily appreciate, however, that the materials and methods disclosed herein will have application in a number of other contexts where it is useful to adjust deposition to produce layers or particles with specific

characteristics. For example, various embodiments are described herein with reference to nanowires. It should be understood, however, that unless otherwise stated, the references herein to nanowires include other types of nanostructures as described in U.S. Patent Number 8,257,866, incorporated by reference herein, such as nanotubes, nanoparticles, nanospheres, nanorods, nanowhiskers, and the like.

[0021] Generally, the term“nanostructures” refers to structures having at least one dimension that is less than about 1 micron. In some embodiments, the structure has at least one dimension that is less than 500 nanometers, or 100 nanometers. This dimension could be a diameter of the nanostructure (e.g., a silicide template nanowire) or of a final coated structure. However, any of the overall dimensions (length and diameter) of the final coated structure do not have to be at a nanoscale. For example, a final structure may include a layer that is about 10 microns in thickness at its greatest diameter and coated over a template that is about 100 nanometers in diameter and 20 microns in length. While this overall structure is about 10.1 microns at its greatest diameter and 20 microns in length, it could be generally referred to as a“nanostructure” because of the dimensions of the template. In specific embodiments, the term“nanowire” refers to structures with nano-scaled shells positioned over elongated template structures.

[0022] In various embodiments, nanowires (as a specific case of nanostructures) have an aspect ratio of greater than one, at least about two, or at least about four. In various embodiments, nano wires have an aspect ratio of at least 10, at least 100, or at least 500. Nanowires may connect to other electrode components (e.g., a conductive substrate, other active material structures, or conductive additives). For example, nanowires may be substrate rooted such that one end of a nanowire is in contact with a substrate.

[0023] The term“silicon-based material” refers to material that is solely silicon or material that is silicon-rich SiE _x , in which E is any element or elements that can form intermetallic or alloy compounds with silicon, such as nitrogen, carbon, boron, phosphorus, oxygen, magnesium, aluminum, germanium, tin, nickel, copper, and combinations thereof. Silicon is at least 50 atomic % of the silicon-based material.

[0024] There may be more than one element E mixed with the silicon. In such cases, x is the sum of the values of the elements (e.g., SiEl _xi E2 _X2 ; x = xi + x2, etc). In various embodiments, the value for x is less than 1, between 0.001 and 0.5, between 0.005 and 0.3; between 0.01 and 0.3; between 0.03 and 3; between 0.01 and 0.1; and between 0.01 and 0.05.

[0025] As will be appreciated below, in some embodiments, a nanostructure includes two different layers of silicon-rich SiEx with E and/or x being the same and or different for each layer. A second SiEx material is alternately referred to as SiFy in such instances. It will thus be appreciated that any description of E and x herein may be applied to F and y, respectively. For example, F is any element or elements that can form intermetallic or alloy compounds with silicon, such as nitrogen, carbon, boron, phosphorus, oxygen, magnesium, aluminum, germanium, tin, nickel, copper, and combinations thereof and y can be independently any value described for x, independent of particular x value.

[0026] In some embodiments, the nanostructures described herein can be made by first growing a nanowire template structure on a substrate. In many embodiments, the nanowire template structure is made of a conductive material. Examples of conductive materials that can be used to form nanowire template structures include metals and metal silicides. In some embodiments, a conductive template may include an oxide. The nanowire template structure is then coated with one or more layers of silicon-based electrode active material(s). Thermal CVD (chemical vapor deposition), HWCVD (hot-wire CVD), PECVD (plasma enhanced chemical vapor deposition), and/or evaporation (with or without thermal or laser assistance) may be used to deposit silicon-based electrode active material layers.

[0027] Various deposition processes produce different profiles when depositing silicon-based electrode active material layers onto nanowire templates. For example, thermal CVD creates a conformal amorphous silicon-based electrode active material coating. HWCVD (also known as catalytic CVD) makes a high density, non-conformal amorphous silicon-based electrode active material coating that is thicker at or near the tips of the nanowires and thinner at the roots of the nanowires near the substrate. PECVD also produces a non-conformal amorphous silicon-based electrode active material coating that is thicker at the ends of the nanowires and thinner at the roots of the nanowires near the substrate. The PECVD coating has a low density with many small voids.

[0028] Silicon-rich SiE _x includes silicon compounds in which x is less than 1 or any range subsumed therein.

[0029] In some embodiments of the invention, silicon-rich SiE _x is deposited onto a nanowire template using PECVD in a reaction chamber. Examples of process gases that may be used for such a deposition include, but are not limited to, silane (SiEE) diluted with hydrogen or argon, and mixed with element(s) E precursors. Such gases become reactive species and generate silicon-rich SiE _x coatings on surfaces of the nanowire template under AC/DC plasma. The amount of element(s) E, and thus the value of x, can be controlled by adjusting the ratio of the process gases.

Reaction chamber temperature may be in the range of 200°C to 600°C or 300°C to 500°C. Plasma power may be in the range of 500W-1000W, depending on the chamber size. Pressure in the process chamber may be in the range of 1 to 200 mTorr.

[0030] Initially, PECVD may deposit a very thin silicon-based electrode active material layer with a thickness less than 1 micron or between 0.1 and 0.4 microns onto the nanowire template along all surfaces, including on the substrate and at the roots of the nanowires adjacent to the substrate. But, as the deposition continues, more and more silicon-based electrode active material accumulates at or near the tips of the nanowires in the nanowire template, shadowing the substrate regions. The result is that the very thin layer of silicon-based electrode active material on the substrate may or may not be continuous, depending on the density and uniformity of nanowires along the substrate surface.

[0031] Figure 1 is a schematic illustration of nanowires over which a silicon-rich SiEx layer has been deposited using PECVD. A nano wire template 110 is rooted to a substrate 120. A silicon-based electrode active material (SiE _x ) layer 140 is deposited onto the nanowire template 110. Note that the SiEx layer 140 is thickest at or near the tips of the nano wires of the nanowire template 110 and tapers off until there is little or no SiEx at the roots of nanowires. The SiEx layer 140 is a non- conformal coating, that is, it does not conform to the shape onto which it is deposited. Figure 1 shows an example where there is essentially no SiE _x on the substrate 120 either. In some arrangements, there is a thin continuous SiEx layer on the substrate 120. In some arrangements, there is a thin discontinuous SiEx layer on the substrate 120. In some arrangements, some or all of the nanowire regions adjacent to the substrate (the roots of the nanowires) have a thin (0.1-0.4 microns) coating of SiEx.

[0032] Figure 2 is a schematic illustration of a nanowire template over which two silicon-based electrode active material layers have been deposited, according to an embodiments. The two different deposition methods have been used to provide optimum silicon-based electrode active material coatings. A nanowire template 210 is rooted to a substrate 220. A first silicon-based electrode active material layer 240 which contains silicon-rich SiEx has been deposited onto the nanowire template 210 using PECVD. The first SiEx layer 240 has a profile that is thickest at or near the tips of the nanowires of the nano wire template 110 and tapers off until there is little or no SiEx at the roots of nanowires. In some embodiments, the first silicon layer 240 has a thickness between 0.5 and 50 microns, between 0.5 and 20 microns thick, or between 10 and 20 microns thick at or near the tips of the nano wires. A second silicon-based electrode active material layer 230 which contains silicon-rich SiEx has been deposited onto the nanowire first layer 240 using thermal CVD. (As indicated above, the identity and/or amount of element“E” may be the same or different than in the first silicon-based electrode active material layer 240; the material may be referred to a silicon-rich SiF _y to distinguish it from the silicon-rich SiEx material in the layer 240). In some embodiments, the second SiE _x layer 230 has a thickness between 5 and 500 nm, between 10 and 200 nm, or between 10 and 90 nm thick. The second SiEx layer 230 is a conformal coating, that is, it conforms to the shape onto which it is deposited. The second SiEx layer 230 is conformal to the surface of the first silicon-based electrode active material layer 240, the substrate 220, and any exposed portions of the nano wire template 210. The second SiEx layer 230 has approximately uniform thickness. The resulting structure has much more silicon-based electrode active material (due to the non-conformal nature of the first silicon-based electrode active material layer 240) at or near the tips of the nano wires than at the root ends.

[0033] The first SiEx layer 240 has a surface roughness and a porosity. The thickness of the second SiEx layer 230, which has a smoother surface than does the first SiEx layer 240, may be adjusted to mitigate the surface roughness of the first SiEx layer 240. A smooth SiEx second layer 230 reduces the overall surface area of the coated nanowire. A reduced surface area means there is less surface on which an SEI (solid electrolyte interphase) layer can form as a battery cycles. Less SEI means less lithium consumption leaving more lithium available for cycling. In some arrangements, it is useful to increase the thickness of the second SiE _x layer 230 as the surface roughness of the first SiEx layer increases. In some

arrangements, the thickness of the second SiEx layer 230 is between 5and 500 nm, between 10 and 200 nm, or between 10 and 90 nm thick.

[0034] The structures described herein have many advantages. In some embodiments, there is more SiEx material near the tip of the nanowire than at the root, but there is still a thin layer of SiEx material at the root. Having such a thin silicon layer at the root strengthens the mechanical connection between the nanowires of the nanowire template and the substrate, helping to ensure that the nanowires do not separate from the substrate during cycling.

[0035] Another advantage is that PECVD SiEx layers are not as dense as the thermal CVD SiEx layers. The SiEx layers made using PECVD may contain a large volume of voids and pores. Such defects can be very helpful in providing space into which the silicon-based electrode active material can expand as it absorbs lithium during battery cell charging. [0036] In some arrangements, even small amounts of the additional element E supports and buffers the swelling of the silicon-based electrode active material as it absorbs lithium ions, which reduces cracking of the silicon-based electrode active material and improves reversibility and cycle life for the battery cell. The element E also dramatically improves lithium ion transport through the silicon-based electrode active material. In some embodiments, the element(s) E combines with silicon to create a structure that disperses nanosized silicon domains in a material matrix. The silicon grains or domains retain their nano-size dimensions for a larger number of cycles due to the physical separation of the silicon grains by the structure. Further, unlike SiCh, which reacts with lithium upon lithiation to irreversibly forming lithium silicate compounds and results in a very high first cycle loss and cell capacity reduction, the silicon-rich SiE _x materials do not result in high first cycle loss and cell capacity reduction. In some embodiments, the level of E in a silicon- rich layer is at least 0.005, 0.01, 0.05, 0.07, 0.1, or 0.15.

[0037] In some embodiments, the level of E in a silicon-rich layer is maintained at a level such that there is sufficient amount of silicon active material available. In some embodiments, the level x of E in SiE _x in one or both of the layers is no more than 0.3, 0.2, 0.15, 0.1, 0.07, 0.05, 0.03, or 0.01. In some embodiments, only one of the two layers includes a SiE _x layer with the other layer being pure silicon or including another element.

[0038] In some embodiments, the first SiE _x silicon layer which is deposited using PECVD is amorphous and has an average density that is less than 2.25 g/cm ³ , less than 2.10 g/cm ³ , or less than 1.70 g/cm ³ , and may include many small voids. The second SiE _x layer which is deposited using thermal CVD s amorphous and has an average density greater than 2.0 g/cm ³ or greater than 2.25 g/cm ³ . In some embodiments, the densities of the two layers may be described in terms of a density difference between the layers, rather by their absolute densities. In some embodiments, the second SiE _x layer has an average density that is at least 0.05 g/cm ³ , at least 0.1 g/cm ³ , at least 0.2 g/cm ³ , at least 0.3 g/cm ³ , greater than the average density of the first layer. As would be understood by a person of ordinary skill in the art, densities of amorphous silicon-based electrode active materials are less than the densities of the same materials with crystalline or poly crystalline morphologies.

[0039] According to various embodiments, the nanostructures described herein may be characterized as having a second SiE _x layer over a first SiE _x layer, the second layer having a density higher than the density of the first layer. Such structures can be used to form anodes in a lithium battery cell. In some embodiments, the first SiE _x layer is amorphous with a low density and may also contain some voids, all or which serves to provide space into which the SiE _x can expand as it absorbs lithium ion during cell cycling. This is an advantage over crystalline or poly crystalline silicon-based electrode active materials which have higher densities and may undergo stress cracking as they absorb lithium ions. In addition, it is easier for lithium ions to diffuse through an amorphous material than through a crystalline or poly crystalline silicon-based electrode active material. As such, the densities of each layer may be adjusted depending on the silicon cycling capacity, power or cycling rate requirements and nano wire template density.

[0040] In certain embodiments, anodes for lithium battery cells are formed from nanowire template structures that are rooted on a conductive substrate that may serve as a current collector for the anode. Examples of conductive substrate materials include copper, copper coated with metal oxides, stainless steel, titanium, aluminum, nickel, chromium, tungsten, other metals, metal silicides and other conductive metal compounds, carbon, carbon fiber, graphite, graphene, carbon mesh, conductive polymers, doped silicon or combinations of above including multi-layer structures. The substrate may be formed as a foil, film, mesh, foam, laminate, wires, tubes, particles, multi-layer structure, or any other suitable configuration. In certain embodiments, a substrate is a metallic foil with a thickness of between about 1 micron and 50 microns or more specifically between about 5 microns and 30 microns.

[0041] The nanowires may be physically and conductively attached to the substrate. The physical attachment may be more than a simple mechanical contact, which might result, for example, from coating a binder with discrete nanostructures onto the substrate. In some embodiments, the physical attachment results from fusion of the nanostructures to the substrate or deposition of the nanostructures or some portion of the nanostructures directly onto the substrate, for example, using CVD techniques or using vapor-liquid- solid CVD growth. In some embodiments, physical attachment results from ballistic impalement of the nanowires onto the substrate. In various embodiments, physical attachment includes metallurgical bonds, such as a formation of alloys of two bonded materials (e.g., silicides). In other embodiments, nanowires are grown from the substrate using other nanowire growth techniques that produce structures with similar shapes and dimensions.

[0042] In many embodiments, the nanowires of the nanowire template contain metal or metal silicides and are electronically conductive. In some embodiments, the nanowires include one or more oxides. Conductive templates can be useful to provide an electronic transport path from the silicon-based electrode active material to the substrate or current collector. In various embodiments, nanowires in a nanowire template are between 10 nanometers and 100 nanometers in diameter and between 10 microns and 100 microns in length. Anodes for lithium battery cells that contain nanowire templates are further described in U.S. Patent No. 7,816,031, which is incorporated by reference herein.

[0043] In some embodiments, a silicon-based material nanostructure has a generally circular symmetry. It should be noted that an array of nanowires having generally circular symmetry includes arrays in which asymmetries may be introduced due to two nanowires being close enough that their coatings abut one another

[0044] Figure 3 shows a schematic cross section drawing that shows a nanowire that has been coated with two SiE _x layers that have deposited using different deposition methods, as described herein. The dimensions dl, d2 and h are labeled: dl is the largest diameter of the coating, d2 is the bottom diameter of the coating, and h is the height of the coated nanowire. The non-conformal coating (porous non- conformal coating alone, or porous non-conformal coating conformally coated with the dense coating) may be characterized in some embodiments by the following ratios: dl/h of 1/2 to 1/9, d2/h of 1/400 to 1/70 and a dl/d2 ratio of 50: 1 to 1.5: 1. In various embodiments, dl is between 4 and 15 microns or between 4 and 12 microns; d2 is between 0.2 and 2 microns; and h is between 20 and 50 microns or between 30 and 40 microns. [0045] In one example, a nano wire having a diameter of about 10 to 50 nm and a length of between about 10 to 25 microns is coated with silicon-rich silicon nitride, such that after coating the diameter of the nanostructure at the root is 100 to 400 nm, the maximum diameter is 2 to 20 microns, and the total height of the anode is 20 to 50 microns.

[0046] In some embodiments, a silicon-based electrode active material non- conformal layer deposited by PECVD may include a hydrogen content of at least 10%. In some embodiments, a silicon-based electrode active material conformal layer deposited by thermal CVD may include a hydrogen content of no more than 7%, or no more than 5%.

[0047] In some embodiments, non-conformal, SiE _x layers are deposited by evaporation or physical vapor deposition (PVD), or hot wire chemical vapor deposition (HWCVD) instead of or in addition to PECVD.

[0048] In a PECVD deposition process, a plasma may be generated either in a chamber in which a substrate is disposed or upstream of the chamber and fed into the chamber. Any type of plasma, including capacitively coupled plasmas, inductively coupled plasmas, and conductive coupled plasmas may be used. Any plasma source may be used, including DC, AC, RF and microwave sources.

[0049] PECVD process conditions can vary according to the particular process and tool used. A fairly wide range of temperatures, e.g., 180°C to 600°C, may be used. Pressures are generally low for plasma processes, e.g., ranging from 1 mTorr to 400 Torr, or 10 mTorr to 100 mTorr, depending on the process.

[0050] In some implementations, the PECVD process used to form the novel structures described herein is an expanding thermal plasma chemical vapor deposition (ETP-CVD) process. In such a process, a plasma-generating gas is passed through a direct current arc plasma generator to form a plasma, with a web or other substrate including a nanowire template in an adjoining vacuum chamber.

A silicon-based source gas is injected into the plasma, with radicals generated. The plasma is expanded via a diverging nozzle and injected into the vacuum chamber and toward the substrate, with a non-conformal layer of amorphous SiE _x formed on the nanowire template. Examples of plasma generating gases include, but are not limited to, argon (Ar) and ammonium (NH3), and nitrogen (N2). In some embodiments, the ionized argon and NH3/N2 species in the plasma collide with silane molecules to form radical species of the silicon source, resulting in deposition of SiEx on the nanowire template. Example ranges for voltages and currents for the DC plasma source are 60 to 80 volts or 50 to 70 amperes.

[0051] In some embodiments, the conformal, dense silicon layers are deposited using as atomic layer deposition (ALD) instead of or in addition to thermal CVD. Any appropriate thermal CVD process may be used, such as low-pressure CVD (LPCVD). Temperatures may go as high as the thermal budget allows, as long as care is taken with metal substrates to ensure that no metal silicide is formed around the nanowire-substrate interface. In some embodiments, chamber pressure during a thermal CVD process is kept low, e.g., 100 mTorr to 2 Torr to prevent gas phase reactions and non-conformal deposition. Higher pressures, e.g., higher than 2 Torr or 500 Torr can result in non-conformal deposition.

[0052] Any appropriate silicon source combined with an element(s) E source may be used for the non-conformal and conformal SiE _x . Examples include, but are not limited to, silane (S1H4), dichlorosilane (H2S1CI2), monochlorosilane (H3S1CI), trichlorosilane (HS1CI3), silicon tetrachloride (SiCH) for the silicon source, Examples for a nitrogen source include, but are not limited to, ammonium (NH3) and nitrogen (N2) to form the silicon-rich silicon nitride layers. Other elements can be introduced into the plasma from gas precursors (CH4, GeH4, B2H6 etc.) or vaporized liquid precursors, as would be the case of organometallic precursors.

[0053] Additional description of depositing active material layers having controlled densities may be found in U.S. Patent Application No. 13/277,821, incorporated by reference herein.

[0054] Still further, a non-Si dominant layer may be the outermost shell of the nanostructure in some embodiments. Examples of layers include metal oxides such as aluminum oxide, titanium oxide, cobalt oxide, and zirconium oxide, metal nitrides, and silicon nitrides or carbon based layers. In some embodiments, a thin layer of any of these may be deposited in addition to or instead of the dense Si layer described above. [0055] In some embodiments the outer SiEx layer may be chemically modified at the surface by gas or solution phase treatment/exposure to add or remove elements and create a 1-10 nm thick layer of a different chemical composition, for example an oxide or a halide.

[0056] According to various embodiments, the first SiE _x layers and the second SiE _x layers each has a uniform density. In some embodiments, deposition conditions may be adjusted during deposition to provide a density gradient in one or both layers. For example, one or both layers may get denser toward the outer part of the layer. In such embodiments, an average density of the layer may be used to characterize the density of layer.

[0057] According to various embodiments, the first SiE _x layers and the second SiE _x layers each has a uniform concentration of the E element(s). SiE _x refers to the total amount of Si and E in a layer. However, in some embodiments, deposition conditions may be adjusted during deposition to provide a concentration gradient in one or both layers. In one example, one or both layers may have an increase in E concentration toward the outer part of the layer. In another example, one or both layers may have a decrease in E concentration toward the outer part of the layer. In yet another example, one or both layers may have an E concentration that varies with both increases and decreases throughout the layer. In such embodiments, an average E concentration of the layer may be used to characterize the E concentration of layer. The concentration profile of E may be said to vary through the thickness of the layer. Concentration profiles that include one or more regions of flat (uniform) profile and one or more regions that increase and/or decrease are included.

Assembly

[0058] Figure 4A is a plan view of a partially-assembled electrochemical cell that uses electrodes described herein, according to certain embodiments. The cell has a positive electrode active layer 402 that is shown covering a major portion of a positive current collector 403. The cell also has a negative electrode active layer 404 that is shown covering a major portion of a negative current collector 405. Separator 406 is between the positive electrode active layer 402 and the negative electrode active layer 404. [0059] In one embodiment, the negative electrode active layer 404 is slightly larger than the positive electrode active layer 402 to ensure trapping of the lithium ions released from the positive electrode active layer 402 by the active material of the negative electrode active layer 404. In one embodiment, the negative electrode active layer 404 extends at least between about 0.25 millimeters and 7 millimeters beyond the positive electrode active layer 402 in one or more directions. In a more specific embodiment, the negative electrode active layer 404 extends beyond the positive electrode active layer 402 by between about 1 millimeter and 2 millimeters in one or more directions. In certain embodiments, the edges of the separator 406 extend beyond the outer edges of at least the negative electrode active layer 404 to provide the complete electronic insulation of the negative electrode from the other battery components.

[0060] Figure 4B is a cross-sectional view of an electrode stack 400 of the partially- assembled electrochemical cell that uses electrodes described herein, according to certain embodiments. There is a positive current collector 403 that has a positive electrode active layer 402a on one side and a positive electrode active layer 402b on the opposite side. There is a negative current collector 405 that has a negative electrode active layer 404a on one side and a negative electrode active layer 404b on the opposite side. There is a separator 406a between the positive electrode active layer 402a and the negative electrode active layer 404a. The separator sheets 406a and 406b serve to maintain mechanical separation between the positive electrode active layer 402a and the negative electrode active layer 404a and acts as a sponge to soak up the liquid electrolyte (not shown) that will be added later. The ends of the current collectors 403, 405, on which there is no active material, can be used for connecting to the appropriate terminal of a cell (not shown).

[0061] Together, the electrode layers 402a, 404a, the current collectors 403, 405, and the separator 406a can be said to form one electrochemical cell unit. The complete stack 400 shown in Figure 4B, includes the electrode layers 402b, 404b and the additional separator 406b. The current collectors 403, 405 can be shared between adjacent cells. When such stacks are repeated, the result is a cell or battery with larger capacity than that of a single cell unit. [0062] Another way to make a battery or cell with large capacity is to make one very large cell unit and wind it in upon itself to make multiple stacks. The cross- section schematic illustration in Figure 5A shows how long and narrow electrodes can be wound together with two sheets of separator to form a battery or cell, sometimes referred to as a jellyroll 500. The jellyroll is shaped and sized to fit the internal dimensions of a curved, often cylindrical, case 502. The jellyroll 500 has a positive electrode 506 and a negative electrode 504. The white spaces between the electrodes are the separator sheets. The jelly roll can be inserted into the case 502.

In some embodiments, the jellyroll 500 may have a mandrel 508 in the center that establishes an initial winding diameter and prevents the inner winds from occupying the center axial region. The mandrel 508 may be made of conductive material, and, in some embodiments, it may be a part of a cell terminal. Figure 5B shows a perspective view of the jelly roll 500 with a positive tab 512 and a negative tab 514 extending from the positive current collector (not shown) and the negative current collector (not shown), respectively. The tabs may be welded to the current collectors.

[0063] The length and width of the electrodes depend on the overall dimensions of the cell and thicknesses of the active layers and the current collectors. For example, a conventional 18650- type cell with 18 mm diameter and 85 mm length may have electrodes that are between about 300 and 1000 mm long. Shorter electrodes corresponding to lower rate and/or higher capacity applications are thicker and have fewer winds.

[0064] A cylindrical design may be used for some lithium ion cells especially when the electrodes can swell during cycling and thus exert pressure on the casing. It is useful to use a cylindrical casing that is as thin as possible while still being able to maintain sufficient pressure on the cell (with a good safety margin). Prismatic (flat) cells may be similarly wound, but their case may be flexible so that they can bend along the longer sides to accommodate the internal pressure. Moreover, the pressure may not be the same within different parts of the cell, and the comers of the prismatic cell may be left empty. Empty pockets may be avoided within lithium ions cells because electrodes tend to be unevenly pushed into these pockets during electrode swelling. Moreover, the electrolyte may aggregate in empty pockets and leave dry areas between the electrodes, negatively affecting lithium ion transport between the electrodes. Nevertheless, for certain applications, such as those dictated by rectangular form factors, prismatic cells are appropriate. In some embodiments, prismatic cells employ stacks of rectangular electrodes and separator sheets to avoid some of the difficulties encountered with wound prismatic cells.

[0065] Figure 5C illustrates a top view of a wound prismatic jellyroll 520. The jellyroll 520 includes a positive electrode 524 and a negative electrode 526. The white space between the electrodes is the separator sheet. The jelly roll 520 is enclosed in a rectangular prismatic case 522. Unlike the cylindrical jellyroll, the winding of the prismatic jellyroll starts with a flat extended section in the middle of the jelly roll. In one embodiment, the jelly roll may include a mandrel (not shown) in the middle of the jellyroll onto which the electrodes and separator are wound.

[0066] Figure 6A illustrates a cross-section of a stacked cell that includes a plurality of cells (601a, 601b, 601c, 601 d, and 601 e), each having a positive electrode (e.g., 603a, 603b), a positive current collector (e.g., 602), a negative electrode (e.g., 605a, 605b), a negative current collector (e.g., 604), and a separator (e.g., 606a, 606b) between the electrodes. Each current collector is shared by adjacent cells. A stacked cell can be made in almost any shape, which is particularly suitable for prismatic batteries. The current collector tabs typically extend from the stack and lead to a battery terminal. Figure 6B shows a perspective view of a stacked cell that includes a plurality of cells.

[0067] Once the electrodes are arranged as described above, the cell is filled with electrolyte. The electrolyte in lithium ions cells may be liquid, solid, or gel. The lithium ion cells with the solid electrolyte are referred to as a lithium polymer cells.

[0068] A typical liquid electrolyte comprises one or more solvents and one or more salts, at least one of which includes lithium. During the first charge cycle

(sometimes referred to as a formation cycle), the organic solvent in the electrolyte can partially decompose on the negative electrode surface to form a SEI layer. The interphase is generally electrically insulating but ionically conductive, thereby allowing lithium ions to pass through. The interphase also prevents decomposition of the electrolyte in the later charging sub-cycles. [0069] Some examples of non-aqueous solvents suitable for some lithium ion cells include the following: cyclic carbonates (e.g., ethylene carbonate (EC), propylene carbonate (PC), butylene carbonate (BC) and vinylethylene carbonate (VEC)), vinylene carbonate (VC), lactones (e.g., gamma-butyrolactone (GBL), gamma- valerolactone (GVL) and alpha-angelica lactone (AGL)), linear carbonates (e.g., dimethyl carbonate (DMC), methyl ethyl carbonate (MEC), diethyl carbonate (DEC), methyl propyl carbonate (MPC), dipropyl carbonate (DPC), methyl butyl carbonate (NBC) and dibutyl carbonate (DBC)), ethers (e.g., tetrahydrofuran (THF), 2- methyltetrahydrofuran, 1,4-dioxane, 1,2-dimethoxy ethane (DME), 1,2- diethoxy ethane and 1,2- dibutoxy ethane), nitrites (e.g., acetonitrile and adiponitrile) linear esters (e.g., methyl propionate, methyl pivalate, butyl pivalate and octyl pivalate), amides (e.g., dimethyl formamide), organic phosphates (e.g., trimethyl phosphate and trioctyl phosphate), organic compounds containing an S=0 group (e.g., dimethyl sulfone and divinyl sulfone), and combinations thereof.

[0070] Non-aqueous liquid solvents can be employed in combination. Examples of these combinations include combinations of cyclic carbonate-linear carbonate, cyclic carbonate- lactone, cyclic carbonate-lactone-linear carbonate, cyclic carbonate-linear carbonate-lactone, cyclic carbonate-linear carbonate-ether, and cyclic carbonate-linear carbonate-linear ester. In one embodiment, a cyclic carbonate may be combined with a linear ester. Moreover, a cyclic carbonate may be combined with a lactone and a linear ester. In a specific embodiment, the ratio of a cyclic carbonate to a linear ester is between about 1:9 to 10:0, preferably 2:8 to 7:3, by volume.

[0071] A salt for liquid electrolytes may include one or more of the following:

LiPFe, LiBF ₄ , LiCICri, LiAsFe, LiN(CF ₃ S0 ₂ )2, LiN(C ₂ F ₅ S02)2, L1CF3SO3,

LiC(CF ₃ S0 ₂ )3, LiPF4(CF ₃ )2, LiPF3(C ₂ F ₅ )3, LiPF3(CF ₃ )3, LiPF3(iso-C3F ₇ )3,

LiPF5(iso-C3F7), lithium salts having cyclic alkyl groups (e.g., (CF ₂ )2(S02) _2x Li), and (CF ₂ )3(S0 ₂ )2xLi), and combinations thereof. Common combinations include LiPFe and L1BF4; LiPFe and LiN(CF ₃ S02) ₂ ; and L1BF4 and LiN(CF3S0 ₂ ) ₂ .

[0072] In one embodiment, the total concentration of salt in a liquid nonaqueous solvent (or combination of solvents) is at least about 0.3 M; in a more specific embodiment, the salt concentration is at least about 0.7M. The upper concentration limit may be driven by a solubility limit or may be no greater than about 2.5 M; in a more specific embodiment, it may be no more than about 1.5 M.

[0073] A solid electrolyte is typically used without the separator because it serves as the separator itself. It is electrically insulating, ionically conductive, and electrochemically stable. In the solid electrolyte configuration, a lithium containing salt, which could be the same as for the liquid electrolyte cells described above, is employed but rather than being dissolved in an organic solvent, it is held in a solid polymer composite. Examples of solid polymer electrolytes may be ionically conductive polymers prepared from monomers containing atoms having lone pairs of electrons available for the lithium ions of electrolyte salts to attach to and move between during conduction, such as polyvinylidene fluoride (PVDF) or chloride or copolymer of their derivatives, poly(chlorotrifluoroethylene), poly(ethylene- chlorotrifluoro-ethylene), or poly(fluorinated ethylene-propylene), polyethylene oxide (PEO) and oxymethylene linked PEO, PEO-PPO-PEO crosslinked with trifunctional urethane, poly(bis(methoxy-ethoxy-ethoxide))- phosphazene (MEEP), triol-type PEO crosslinked with difunctional urethane,

poly((oligo)oxyethylene)methacrylate-co-alkali metal methacrylate,

polyacrylonitrile (PAN), polymethylmethacrylate (PNMA), polymethylacrylonitrile (PMAN), polysiloxanes and their copolymers and derivatives, acrylate-based polymer, other similar solvent-free polymers, combinations of the foregoing polymers either condensed or cross-linked to form a different polymer, and physical mixtures of any of the foregoing polymers. Other less conductive polymers that may be used in combination with the above polymers to improve the strength of thin laminates include: polyester (PET), polypropylene (PP), polyethylene napthalate (PEN), polyvinylidene fluoride (PVDF), polycarbonate (PC), polyphenylene sulfide (PPS), and polytetrafluoroethylene (PTFE).

[0074] Figure 7 illustrates a cross-section view of a wound cylindrical cell, in accordance with one embodiment. A jelly roll comprises a spirally wound positive electrode 702, a negative electrode 704, and two sheets of the separator 706. The jelly roll is inserted into a cell case 716, and a cap 718 and gasket 720 are used to seal the cell. It should be noted that in certain embodiments a cell is not sealed until after subsequent operations. In some cases, cap 718 or cell case 716 includes a safety device. For example, a safety vent or burst valve may be employed to open if excessive pressure builds up in the battery. In certain embodiments, a one- way gas release valve is included to release oxygen that has been released during activation of the positive material. Also, a positive thermal coefficient (PTC) device may be incorporated into the conductive pathway of cap 718 to reduce the damage that might result if the cell suffered a short circuit. The external surface of the cap 718 may be used as the positive terminal, while the external surface of the cell case 716 may serve as the negative terminal. In an alternative embodiment, the polarity of the battery is reversed and the external surface of the cap 718 is used as the negative terminal, while the external surface of the cell case 716 serves as the positive terminal. Tabs 708 and 710 may be used to establish a connection between the positive and negative electrodes and the corresponding terminals. Appropriate insulating gaskets 714 and 712 may be inserted to prevent the possibility of internal shorting. For example, a Kapton™ film may be used for internal insulation. During fabrication, the cap 718 may be crimped to the cell case 716 in order to seal the cell. However, prior to this operation, electrolyte (not shown) is added to fill the porous spaces of the jelly roll.

[0075] A rigid case is typically used for lithium ion cells, while lithium polymer cells may be packed into flexible, foil-type (polymer laminate) cases. A variety of materials can be chosen for the cases. For lithium-ion batteries, Ti-6-4, other Ti alloys, Al, A1 alloys, and 300 series stainless steels may be suitable for the positive conductive case portions and end caps, and commercially pure Ti, Ti alloys, Cu, Al, Al alloys, Ni, Pb, and stainless steels may be suitable for the negative conductive case portions and end caps.

[0076] In addition to the battery applications described above, the nanostructures may be used in fuel cells (e.g., for anodes, cathodes, and electrolytes), hetero junction solar cell active materials, various forms of current collectors, and/or absorption coatings.

Experimental and Results

[0077] Nanowire templates on metal foil were exposed to silane, argon, and ammonium or nitrogen gases, inside PECVD plasma chamber, resulting in a first layer of silicon-rich SiN _x layer deposited on the nanowire template. A second coating of a silicon-rich SiN _x was deposited onto the first SiN _x layer using thermal CVD to form an anode for a lithium battery cell. In addition to the anode fabricated above, the cell included a lithium cobalt oxide cathode, a separator and carbonate based electrolyte with LiPF6 salt. [0078] Figure 8 is a graph that shows capacity retention as a function of cell cycle number for both the silicon-rich SiN _x cell and a cell with an anode that contained only silicon. Both cells were charged and discharged at C/2 rate. The SiN _x capacity retention profile for the SiN _x cell degrades much slower than for the Si only cell.

The SiN _x cell life cycle is about 75% longer than that of the Si only cell. Cycling data from cells that contain silicon-rich SiE _x anodes, as described herein, shows that such anodes have increased cycle lifetimes compared to anodes made from silicon alone.

[0079] This invention has been described herein in considerable detail to provide those skilled in the art with information relevant to apply the novel principles and to construct and use such specialized components as are required. However, it is to be understood that the invention can be carried out by different equipment, materials and devices, and that various modifications, both as to the equipment and operating procedures, can be accomplished without departing from the scope of the invention itself.