COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2012/127567

Kind Code:

A1

Abstract:

This compound semiconductor device is provided with: a first electrode (3); an intrinsic first compound semiconductor layer (1), which is formed above the first electrode (3); a second compound semiconductor layer (2), which is formed on the first compound semiconductor layer (1), and has a band gap smaller than that of the first compound semiconductor layer (1); and a second electrode (4), which is formed above the second compound semiconductor layer (2).

Inventors:

IMADA TADAHIRO (JP)

Application Number:

PCT/JP2011/056580

Publication Date:

September 27, 2012

Filing Date:

March 18, 2011

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Assignee:

FUJITSU LTD (JP)
IMADA TADAHIRO (JP)

International Classes:

H01G7/00; H01L21/338; H01L29/778; H01L29/812

Foreign References:

JPH10223901A	1998-08-21
JP2009004743A	2009-01-08
JP2010040814A	2010-02-18

Other References:

MARCIN MICZEK ET AL.: "Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors", JOURNAL OF APPLIED PHYSICS, vol. 103, no. 10, 28 May 2008 (2008-05-28), pages 104510-1 - 104510-11, XP012108813
M. FAGERLIND ET AL.: "Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors", JOURNAL OF APPLIED PHYSICS, vol. 108, no. 1, 13 July 2010 (2010-07-13), pages 014508-1 - 014508-6, XP012141821

Attorney, Agent or Firm:

KOKUBUN, Takayoshi (JP)
Takayoshi Kokubu (JP)

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