Title:
COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/019439
Kind Code:
A1
Abstract:
The present invention is provided with: a flexible section (101); a first nitride semiconductor layer (102) that is provided with a first polar surface and a second polar surface, which intersect a surface of the flexible section; a second nitride semiconductor layer (103), which has a lattice constant different from that of the first nitride semiconductor layer (102), and which is in contact with the first nitride semiconductor layer (102) on the first polar surface; and a third nitride semiconductor layer (104), which has a lattice constant different from that of the first nitride semiconductor layer (102), and which is in contact with the first nitride semiconductor layer (102) on the second polar surface. The present invention is also provided with: a first ohmic electrode (105), which is formed above an interface between the first nitride semiconductor layer (102) and the second nitride semiconductor layer (103); and a second ohmic electrode (106), which is formed above an interface between the first nitride semiconductor layer (102) and the third nitride semiconductor layer (104).
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Inventors:
OKAMOTO NAOYA (JP)
Application Number:
PCT/JP2013/071341
Publication Date:
February 12, 2015
Filing Date:
August 07, 2013
Export Citation:
Assignee:
FUJITSU LTD (JP)
International Classes:
H01L41/113; H01L41/047; H01L41/187; H01L41/29; H01L41/332; H02N2/18
Foreign References:
| JP2006098408A | 2006-04-13 | |||
| JP2012224539A | 2012-11-15 | |||
| JPH0273162A | 1990-03-13 |
Attorney, Agent or Firm:
KOKUBUN, Takayoshi (JP)
Takayoshi Kokubu (JP)
Takayoshi Kokubu (JP)
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