Title:
COMPOUND SEMICONDUCTOR HALL ELEMENT AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/242611
Kind Code:
A1
Abstract:
Disclosed in embodiments of the present invention are a compound semiconductor Hall element and a manufacturing method therefor. The compound semiconductor Hall element comprises a substrate, a bonding layer, a magnetic induction portion, and electrode portions. The bonding layer is on the surface of the substrate. The magnetic induction portion is bonded to the substrate by means of the bonding layer. The electrode portions are located at the periphery of the magnetic induction portion and forms ohmic contact with the magnetic induction portion. The magnetic induction portion has high mobility and high sheet resistance, so that the compound semiconductor Hall element has high sensitivity and low power consumption.
Inventors:
HU SHUANGYUAN (CN)
ZHU XIN (CN)
ZHU XIN (CN)
Application Number:
PCT/CN2022/093169
Publication Date:
November 24, 2022
Filing Date:
May 16, 2022
Export Citation:
Assignee:
SUZHOU MATRIX OPTOELECTRONICS CO LTD (CN)
International Classes:
H01L43/06; H01L43/04; H01L43/10; H01L43/14
Foreign References:
| CN113241403A | 2021-08-10 | |||
| CN113299824A | 2021-08-24 | |||
| JP2010050467A | 2010-03-04 | |||
| JPH11204855A | 1999-07-30 |
Attorney, Agent or Firm:
BEIJING BICREATION INTELLECTUAL PROPERTY LLC. (CN)
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