CONDUCTIVE MATERIAL, CONNECTION METHOD USING SAME, AND CONNECTION STRUCTURE

WIPO Patent Application WO/2016/114028

A1

Provided are: a conductive material which is capable of forming an intermetallic compound having a high melting point by reliably reacting a first metal with a second metal that has a higher melting point than the first metal, and which enables the achievement of highly reliable mounting of an electronic component or via connection if used for the mounting of an electronic component or the via connection; a connection method having high connection reliability, which uses this conductive material; and a connection structure. A conductive material which contains a first metal and a second metal that has a higher melting point than the first metal, and which is configured so as to satisfy such requirements that: the first metal is Sn or an alloy containing Sn; the second metal is at least one alloy selected from the group consisting of Cu-Mn alloys, Cu-Ni alloys, Cu-Al alloys and Cu-Cr alloys; the second metal has a layer containing Ag or Au on the surface; and the first metal and the second metal form an intermetallic compound having a melting point of 310°C or more.

NAKANO KOSUKE (JP)
TAKAOKA HIDEKIYO (JP)
TORITA TAKESHI (JP)
KOKUBO DAISUKE (JP)
NIIMI JUN (JP)
ANDATSU MASAHIRO (JP)

PCT/JP2015/083984

July 21, 2016

December 03, 2015

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MURATA MANUFACTURING CO (JP)

B23K35/22; B23K1/19; B23K35/14; B23K35/26; B23K35/30; C22C9/00; C22C9/06; C22C13/00; C22C13/02; H01L21/60; H05K3/34; B23K101/42; H05K1/11; H05K3/40

WO2012066795A1	2012-05-24
WO2013038816A1	2013-03-21
WO2013038817A1	2013-03-21
WO2013132954A1	2013-09-12

JP2012174332A	2012-09-10
JP2011251329A	2011-12-15
JP2014038909A	2014-02-27
JP2014180690A	2014-09-29

NISHIZAWA, HITOSHI (JP)
Hitoshi Nishizawa (JP)

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