Title:
CONDUCTOR LAYER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/169796
Kind Code:
A1
Abstract:
Provided is a conductor layer manufacturing method. The conductor layer manufacturing method comprises: providing a wafer (21) with an opening; depositing conductive crystalline grains on the wafer (21) and on the bottom and side walls of the opening, so as to form a conductive film (22), wherein during deposition of the conductive crystalline grains, the temperature of the surface of the wafer (21) is lower than the flowing temperature of the conductive film (22), and when the temperature of the wafer (21) is higher than or equal to the flowing temperature, the conductive film (22) starts to flow; and after the conductive film (22) is formed, increasing the temperature of the surface of the wafer (21) to perform a reflow process, such that the conductive film (22) is transformed into a conductive layer (23) fully filling the opening.
Inventors:
LI KAIXUAN (CN)
Application Number:
PCT/CN2021/076097
Publication Date:
September 02, 2021
Filing Date:
February 08, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768
Foreign References:
| CN107946233A | 2018-04-20 | |||
| CN1090091A | 1994-07-27 | |||
| CN101399220A | 2009-04-01 | |||
| CN101431049A | 2009-05-13 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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