Title:
CONNECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/210559
Kind Code:
A1
Abstract:
Provided are a connection device in which flow stagnation does not readily occur, and a method for manufacturing the same. This connection device (1) has an internal cavity (9) for connecting, in a state allowing fluid transport, a flow path (3) and a housing (7) accommodating membranes (5), the connection device (1) also having a plurality of flow path adjustment walls (13) provided in the internal cavity (9). The method for manufacturing the connection device (1) includes a step for installing, in a main body section (11) of the connection device (1), a plurality of virtual flow path layers having thicknesses corresponding to inter-membrane flow paths (17) formed by a plurality of stacked membranes (5), a step for forming the plurality of flow path adjustment walls (13) among the plurality of virtual flow path layers, and a step for obtaining inter-adjustment-wall flow paths (15) formed by the plurality of flow path adjustment walls (13) by forming the plurality of flow path adjustment walls (13) and then removing the virtual flow path layers.
More Like This:
Inventors:
MIKI NORIHISA (JP)
OTA TAKASHI (JP)
KONO REI (JP)
OTA TAKASHI (JP)
KONO REI (JP)
Application Number:
PCT/JP2023/016044
Publication Date:
November 02, 2023
Filing Date:
April 24, 2023
Export Citation:
Assignee:
UNIV KEIO (JP)
International Classes:
A61M1/36; A61M1/16
Foreign References:
| JPS49114294A | 1974-10-31 | |||
| JP2006055205A | 2006-03-02 | |||
| JP2010501257A | 2010-01-21 | |||
| JPH0239548Y2 | 1990-10-23 |
Attorney, Agent or Firm:
HIROSE Takayuki (JP)
Download PDF:
Previous Patent: COMPOSITION FOR FORMING THIN FILM FOR ENERGY STORAGE DEVICE ELECTRODE
Next Patent: SEMICONDUCTOR MANUFACTURING DEVICE SYSTEM
Next Patent: SEMICONDUCTOR MANUFACTURING DEVICE SYSTEM