COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY, METHOD FOR PRODUCING SAME, AND COMPOSITION

WIPO Patent Application WO/2005/105869

A1

Disclosed is a copolymer for semiconductor lithography wherein the composition of a hydroxyl group-containing repeating unit in the low molecular weight region is controlled for improving the resist pattern shape in a semiconductor lithography process which resist pattern shape greatly affects processing precision, degree of integration, and further the yield. Also disclosed is a method for producing such a copolymer for semiconductor lithography. Specifically, a copolymer for semiconductor lithography obtained by copolymerizing a monomer having a hydroxyl group and a monomer not having a hydroxyl group is disclosed wherein the composition of a repeating unit containing a hydroxyl group is controlled.

JP2000204124	ORGANIC POLYMER AND ITS PRODUCTION, COMPLEX OF THE SAME ORGANIC POLYMER WITH INORGANIC COMPOUND AND PRODUCTION OF THE SAME COMPLEX
WO/1985/003504	PROCESS FOR MAKING SUBSTITUTED CARBOXYLIC ACIDS AND DERIVATIVES THEREOF

YAMAGISHI TAKANORI (JP)
OKADA TAKAYOSHI (JP)
YAMAGUCHI KENJI (JP)
MIKI KIYOMI (JP)

PCT/JP2005/008168

November 10, 2005

April 28, 2005

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MARUZEN PETROCHEM CO LTD (JP)
YAMAGISHI TAKANORI (JP)
OKADA TAKAYOSHI (JP)
YAMAGUCHI KENJI (JP)
MIKI KIYOMI (JP)

C08F8/00; C08F212/04; C08F220/26; G03F7/004; G03F7/039; G03F7/11; (IPC1-7): C08F212/04; C08F8/00; C08F220/26; G03F7/039; G03F7/11

WO1999050322A1	1999-10-07
WO1999040132A1	1999-08-12

JP2004300441A	2004-10-28
JP2001151823A	2001-06-05
JPH10274852A	1998-10-13
JPH10251315A	1998-09-22

The, Patent Corporate Body Aruga Patent Office (3-6 Nihonbashiningyocho 1-chome, Chuo-k, Tokyo 13, JP)

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