COPPER ALLOY, COPPER ALLOY PLASTIC WORKING MATERIAL, COMPONENT FOR ELECTRONIC/ELECTRICAL DEVICE, TERMINAL, BUS BAR, LEAD FRAME, AND HEAT DISSIPATION SUBSTRATE

WIPO Patent Application WO/2022/004779

A1

This copper alloy includes more than 10 mass ppm and less than 100 mass ppm of Mg, the balance being Cu and unavoidable impurities. Among the unavoidable impurities, the S content is 10 mass ppm or less, the P content is 10 mass ppm or less, the Se content is 5 mass ppm or less, the Te content is 5 mass ppm or less, the Sb content is 5 mass ppm or less, the Bi content is 5 mass ppm or less, the As content is 5 mass ppm or less, and the total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio (Mg)/(S+P+Se+Te+Sb+Bi+As) in the copper alloy is 0.6-50, the electrical conductivity is 97% IACS or greater, the semi-softening temperature ratio TLD/TTD is greater than 0.95 and less than 1.08, and the semi-softening temperature TLD is 210°C or higher.

JP2000015331	MANUFACTURE OF CUPRIC LEAD MATERIAL FOR SEMICONDUCTOR
JP6145268	A manufacturing method of a super-thin conductor and a super-thin conductor, and a super-thin electric wire
JP2004256902	Cu-Cr-Zr ALLOY, AND PRODUCTION METHOD THEREFOR

MATSUNAGA HIROTAKA (JP)
FUKUOKA KOSEI (JP)
MAKI KAZUNARI (JP)
MORIKAWA KENJI (JP)
FUNAKI SHINICHI (JP)
MORI HIROYUKI (JP)

PCT/JP2021/024723

January 06, 2022

June 30, 2021

Click for automatic bibliography generation  

MITSUBISHI MATERIALS CORP (JP)

C22C9/00; C22F1/08; H01B1/02; H01B5/02; C22F1/00

JP2017186623A	2017-10-12
JPH0372041A	1991-03-27
JP2016056414A	2016-04-21
JP2008255416A	2008-10-23
JP2001152267A	2001-06-05
JPH04280935A	1992-10-06
JP2020112695A	2020-07-27
JP2020112927A	2020-07-27
JP2020181736A	2020-11-05
JP2016056414A	2016-04-21

MATSUNUMA Yasushi et al. (JP)

View/Download PDF      PDF Help

Previous Patent: METHOD FOR PARTIALLY OXIDIZING ALKANE

Next Patent: HOLLOW FIBER MEMBRANE MODULE FOR CROSS-FLOW FILTRATION AND OPERATION METHOD THEREOF