COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM

WIPO Patent Application WO/2015/174173

A1

This copper compound is represented by general formula (I). In general formula (I), each of R1-R3 independently represents a linear or branched chain alkyl group having 1-5 carbon atoms, provided that in cases where R1 and R2 are methyl groups, R3 represents a linear or branched chain alkyl group having 2-5 carbon atoms, and in cases wherein R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched chain alkyl group having 3-5 carbon atoms. A starting material for forming a thin film according to the present invention contains the copper compound represented by general formula (I). The present invention is able to provide: a copper compound which has a low melting point and can be transported in a liquid state, and which has a high vapor pressure and is easy to be vaporized; and a starting material for forming a thin film, which uses this copper compound.

YOSHINO TOMOHARU (JP)
ENZU MASAKI (JP)
SAKURAI ATSUSHI (JP)
NISHIDA AKIHIRO (JP)
OKABE MAKOTO (JP)

PCT/JP2015/060997

November 19, 2015

April 08, 2015

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ADEKA CORP (JP)

C07C215/08; C23C16/18; H01L21/28; H01L21/285; C07F1/08

US20130330473A1	2013-12-12
US6822107B1	2004-11-23
JP2008537947A	2008-10-02

BECKER, RALF ET AL.: "A study on the metal- organic CVD of pure copper films from low cost copper(II) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand", CHEMICAL VAPOR DEPOSITION, vol. 9, no. 3, 2003, pages 149 - 156, XP055236204
See also references of EP 3144293A4

SOGA, Michiharu et al. (JP)
Michiharu Soga (JP)

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