Title:
COPPER PASTE FOR PRESSURE BONDING, SEMICONDUCTOR DEVICE, METHOD FOR PREPARING COPPER PASTE FOR PRESSURE BONDING, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189120
Kind Code:
A1
Abstract:
Provided is a copper paste for pressure bonding, the copper paste comprising at least: two or more copper powders having different shapes and/or particle sizes; and a solvent. The viscosity of the copper paste is 10-200 Pa·s. A is 0.60 or more and less than 0.82, and H is 0.75 or more and 1.00 or less, where A is the ratio of the total mass of the two or more copper powders to the mass of the copper paste, B is the thickness of a coating film formed by applying the copper paste to a substrate, C is the thickness of a dry coating film formed by drying the coating film at 110°C for 20 minutes in an air atmosphere, and the bulkiness index H is expressed as H=C/(A×B).
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Inventors:
ANAI KEI (JP)
NISHIKAWA JO (JP)
NISHIKAWA JO (JP)
Application Number:
PCT/JP2023/007403
Publication Date:
October 05, 2023
Filing Date:
February 28, 2023
Export Citation:
Assignee:
MITSUI MINING & SMELTING CO LTD (JP)
International Classes:
H01B1/22; B22F1/00; B22F1/052; B22F1/06; B22F1/107; B22F7/08; B22F9/00; H01L21/52
Domestic Patent References:
| WO2020203530A1 | 2020-10-08 |
Foreign References:
| JP2019002054A | 2019-01-10 | |||
| JP2020032657A | 2020-03-05 |
Attorney, Agent or Firm:
SHOWA INTERNATIONAL PATENT FIRM (JP)
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