Title:
COPPER PLATING BATH AND METHOD FOR PLATING SUBSTRATE BY USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2002/090623
Kind Code:
A1
Abstract:
A copper plating bath characterized by containing a reaction condensation product of a compound of amine and a glycidyl ether and/or a quaternary ammonium derivative of the product and a method for plating a substrate using the plating bath. A substrate such as a semiconductor wafer, e.g., a silicon wafer or a printed circuit board, having a fine circuit pattern and a fine hole such as a blind via hole or a through hole can be plated with copper with high reliability.
Inventors:
HAGIWARA HIDEKI (JP)
KIMIZUKA RYOICHI (JP)
TERASHIMA YOSHITAKA (JP)
MARUYAMA MEGUMI (JP)
MIYAKE TAKASHI (JP)
NAGASAWA HIROSHI (JP)
SAHODA TSUYOSHI (JP)
IIMURA SEIJI (JP)
KIMIZUKA RYOICHI (JP)
TERASHIMA YOSHITAKA (JP)
MARUYAMA MEGUMI (JP)
MIYAKE TAKASHI (JP)
NAGASAWA HIROSHI (JP)
SAHODA TSUYOSHI (JP)
IIMURA SEIJI (JP)
Application Number:
PCT/JP2002/004509
Publication Date:
November 14, 2002
Filing Date:
May 09, 2002
Export Citation:
Assignee:
EBARA UDYLITE KK (JP)
EBARA CORP (JP)
HAGIWARA HIDEKI (JP)
KIMIZUKA RYOICHI (JP)
TERASHIMA YOSHITAKA (JP)
MARUYAMA MEGUMI (JP)
MIYAKE TAKASHI (JP)
NAGASAWA HIROSHI (JP)
SAHODA TSUYOSHI (JP)
IIMURA SEIJI (JP)
EBARA CORP (JP)
HAGIWARA HIDEKI (JP)
KIMIZUKA RYOICHI (JP)
TERASHIMA YOSHITAKA (JP)
MARUYAMA MEGUMI (JP)
MIYAKE TAKASHI (JP)
NAGASAWA HIROSHI (JP)
SAHODA TSUYOSHI (JP)
IIMURA SEIJI (JP)
International Classes:
C25D3/38; H05K3/42; (IPC1-7): C25D3/38
Foreign References:
| US4384930A | 1983-05-24 | |||
| JP2000273684A | 2000-10-03 |
Attorney, Agent or Firm:
Ono, Nobuo (1-13-1 Kandaizumi-ch, Chiyoda-ku Tokyo, JP)
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