Title:
CORRECTION METHOD FOR SURFACE PLASMA PHOTOLITHOGRAPHIC PATTERN
Document Type and Number:
WIPO Patent Application WO/2023/077253
Kind Code:
A1
Abstract:
Disclosed in the present invention is a correction method for a surface plasma photolithographic pattern, comprising: forming multiple test patterns on a test mask, each test pattern at least being represented by a first test parameter and a second test parameter related to the first test parameter; exposing a photoresist layer by using the test mask containing the test patterns to form multiple photoresist patterns, each photoresist pattern at least being represented by a first exposure parameter and a second exposure parameter related to the first exposure parameter; establishing a first data table on the basis of a correspondence between the first test parameters and second test parameters of the test patterns and the first exposure parameters and second exposure parameters of the photoresist patterns; processing the first data table according to the first exposure parameters to obtain a second data table; and correcting second test parameters of multiple design patterns on the basis of the second data table to obtain corrected design patterns, and using the corrected design patterns to manufacture a mask for exposure.
Inventors:
MA LE (CN)
WEI YAYI (CN)
ZHANG LIBIN (CN)
HE JIANFANG (CN)
WEI YAYI (CN)
ZHANG LIBIN (CN)
HE JIANFANG (CN)
Application Number:
PCT/CN2021/128055
Publication Date:
May 11, 2023
Filing Date:
November 02, 2021
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L21/027; G03F7/20
Foreign References:
| CN110716386A | 2020-01-21 | |||
| CN111430261A | 2020-07-17 | |||
| CN106647163A | 2017-05-10 | |||
| JP2005310958A | 2005-11-04 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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