Title:
CRYSTAL DEFECT OBSERVATION METHOD FOR COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2021/084755
Kind Code:
A1
Abstract:
A device in which a gate electrode (3) is formed, along a [2-1-10] direction, on a plane c (0001) of a compound semiconductor (1) having a wurtzite structure is cut at a (10-10) plane, whereby a sample (4) is made. Edge dislocation in which Burgers vectors are 1/3[2-1-10] and 1/3[-2110] and mixed dislocation in which Burgers vectors are 1/3[2-1-13] and 1/3[-2113] are observed with a transmission electron microscope by causing an electron beam (5) to enter the sample (4) from a [-1010] direction.
Inventors:
SASAKI HAJIME (JP)
Application Number:
PCT/JP2019/043132
Publication Date:
May 06, 2021
Filing Date:
November 01, 2019
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
G01N23/04
Domestic Patent References:
| WO2009035079A1 | 2009-03-19 |
Foreign References:
| JP2000349338A | 2000-12-15 | |||
| JP2004327766A | 2004-11-18 | |||
| JP2017147464A | 2017-08-24 | |||
| JP6521205B1 | 2019-05-29 | |||
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| JP2015188003A | 2015-10-29 | |||
| JP2009149513A | 2009-07-09 | |||
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| JP2014003146A | 2014-01-09 | |||
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| US20160139063A1 | 2016-05-19 |
Other References:
ISHIKAWA, YUKARI: "Currentsituation and issues of detection and analysis of dislocations in GaN", HE 47TH THIN FILM AND SURFACE PHYSICS SEMINAR, BASICS AND APPLICATIONS OF SEMICONDUCTOR GAN SYNTHESIS/ANALYSIS/STRUCTURAL DESIGN TECHNOLOGY FOR POWER DEVICE DEVELOPMENT, vol. 47, 26 July 2019 (2019-07-26), pages 19 - 24
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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