CRYSTAL PULLING METHOD AND SINGLE CRYSTAL FURNACE

WIPO Patent Application WO/2023/179081

A1

A crystal pulling method and a single crystal furnace. One end, close to a seed crystal, of an equal-diameter portion of the pulled silicon single crystal rod extends in a radial direction thereof to form a protruding portion, and the diameter of the protruding portion is larger than that of the equal-diameter portion. The crystal pulling method comprises: controlling a first limiting member and a second limiting member to be located at a first relative position, wherein the first relative position represents a position when a distance between the first limiting member and the second limiting member is larger than the diameter of the protruding portion; obtaining state parameters of the silicon single crystal rod; and when the state parameters meet preset conditions, controlling the first limiting member and the second limiting member to be located at a second relative position, wherein the second relative position represents a position when the distance between the first limiting member and the second limiting member is smaller than the diameter of the protruding portion and larger than the diameter of the equal-diameter portion.

ZHU YONGGANG (CN)
DONG SHENG (CN)
ZHANG WEIJIAN (CN)
LI QIAO (CN)
BAI FENG (CN)

PCT/CN2022/135602

September 28, 2023

November 30, 2022

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LONGI GREEN ENERGY TECHNOLOGY CO LTD (CN)

C30B29/06; C30B15/00; C30B15/20

US5173270A	1992-12-22
CN215517730U	2022-01-14
CN113549999A	2021-10-26
CN110065815A	2019-07-30
CN114808114A	2022-07-29
CN218291180U	2023-01-13
CN113337882A	2021-09-03

BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)

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