CRYSTALLINE FORMS OF CABAZITAXEL

CROSS-REFERENCES TO RELATED APPLICATIONS

[0001] This application claims priority from U.S. Provisional Patent Application Serial Number 61/533,111, which was filed on September 09, 2011, and U.S. Provisional Patent Application Serial Number 61/606,288, which was filed on March 07, 2012. The entire content of these two provisional applications is incorporated herein by reference.

STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT

[0002] NOT APPLICABLE

REFERENCE TO A "SEQUENCE LISTING," A TABLE, OR A COMPUTER PROGRAM LISTING APPENDIX SUBMITTED ON A COMPACT DISK

[0003] NOT APPLICABLE

BACKGROUND OF THE INVENTION

[0004] Jevtana ^® is an injectable antineoplastic medicine whose active pharmaceutical ingredient (API), cabazitaxel, belongs to the taxane class, and is closely related in both chemical structure and mode of action to the anticancer drugs paclitaxel and docetaxel. Cabazitaxel is prepared by semi- synthesis from 10-deacetylbaccatin III (10-DAB) that is extracted from yew tree needles. The chemical name of cabazitaxel is (2a^^,103,13a)-4-acetoxy-13-({(2R,3S)-3-[(tert-butoxycarbony l) amino]-2-hydroxy-3-phenylpropanoyl}oxy)-l-hydroxy-7,10-dimet hoxy-9-oxo-5,20-epoxy-tax-ll-en- 2-yl benzoate, and the compound is marketed as a 1:1 acetone solvate (Compound A, below).

Compound A - cabazitaxehacetone solvate of Jevtana

[0005] The acetone solvate of cabazitaxel is a white to off-white powder with a molecular formula of C _4S Hs ₇ NOi ₄ .C ₃ H60 and a molecular weight of 894.01 grams per mole. The molecular weight of the solvent free form is 835.93 grams per mole.

[0006] Cabazitaxel is a dimethyl derivative (also called dimethoxy docetaxel) of docetaxel, which itself is semi-synthetic, and was originally developed by Rhone-Poulenc Rorer and was approved by the U.S. Food and Drug Administration (FDA) for the treatment of hormone-refractory prostate cancer. Cabazitaxel is a microtubule inhibitor.

[0007] The acetone solvate crystalline form of cabazitaxel and a process for its preparation is disclosed in U.S. Patent No. 7,241,907; the XRPD (X-ray powder diffraction) pattern for this solvate type is shown in Figure la.

[0008] Other crystalline forms of cabazitaxel, including anhydrous forms, hydrates, ethanolates, and ethanol/water heterosolvates, are claimed in WO 2009/115655. Certain non-ethanolic solvates have been suggested in WO 2009/115655 and U.S. 2011/0144362, but have not been chemically characterized.

BRIEF SUMMARY OF THE INVENTION

[0009] In one aspect, the present invention provides a crystalline form of cabazitaxel selected from the group consisting of Form CI, C2, C3, C4, C5, C6, C7, C8, C9, C8b and C9p. The novel forms have been chemically characterized by ¹ NMR (nuclear magnetic resonance) spectroscopy, XRPD, FTIR (Fourier transform infrared) spectroscopy (also abbreviated to IR spectroscopy), TGA

(thermogravimetric analysis) and DSC (differential scanning calorimetry). [0010] In a second aspect, the present invention provides preparations comprising one or more novel crystalline forms of cabazitaxel and one or more pharmaceutically acceptable excipients.

[0011] In a third aspect, the present invention provides processes for the preparation of the crystalline Form C9p of cabazitaxel. In some embodiments, the inventive process includes: a) slowly cooling a solution comprising cabazitaxel, acetic acid, and H ₂ 0 to form a mixture comprising a solid material;

b) filtering the mixture resulting from step a) and washing the isolated solid; and c) drying the isolated and washed solid resulting from step b) under vacuum with a nitrogen gas purge.

[0012] In some embodiments, the inventive process for the preparation of the crystalline Form C9p of cabazitaxel includes: a) subjecting cabazitaxel to acetic acid vapour; and

b) purging the resulting AcOH solvate with a stream of nitrogen gas.

BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 shows the XRPD pattern for a previously known 1:1 cabazitaxehacetone solvate.

[0014] Figure 2a shows the XRPD pattern of cabazitaxel Form CI.

[0015] Figure 2b shows the IR spectrum of cabazitaxel Form CI.

[0016] Figure 2c shows the DSC trace of cabazitaxel Form CI.

[0017] Figure 2d shows the TGA trace of cabazitaxel Form CI.

[0018] Figure 2e shows the *Η NMR spectrum of cabazitaxel Form CI.

[0019] Figures 3a to 10a show XRPD patterns of cabazitaxel Forms C2 to C9.

[0020] Figures 3b to 10b show IR spectra of cabazitaxel Forms C2 to C9.

[0021] Figures 3c to 10c show DSC/TGA traces of cabazitaxel Forms C2 to C9.

[0022] Figures 3d to lOd show ¹ H NMR spectra of cabazitaxel Forms C2 to C9.

[0023] Figures 11a and 12a show XRPD patterns of cabazitaxel Forms C8b and C9p. [0024] Figures lib and 12b show I spectra of cabazitaxel Forms C8b and C9p.

[0025] Figures 11c and 12c show DSC traces of cabazitaxel Forms C8b and C9p.

[0026] Figures lid and 12d show TGA traces of cabazitaxel Forms C8b and C9p.

[0027] Figures lie and 12e show ¹ NMR spectra of cabazitaxel Forms C8b and C9p.

[0028] Figure 13 shows the weight change of cabazitaxel Form C9p during drying.

DETAILED DESCRIPTION OF THE INVENTION

[0029] The present invention provides novel crystalline forms of cabazitaxel. The crystalline forms can be produced by the methods described herein and are substantially free of other crystalline forms. The term "substantially free" refers to an amount of 10% or less of another form, preferably 8%, 5%, 4%, 3%, 2%, 1%, 0.5%, or less of another form.

[0030] In one aspect, the present invention provides a crystalline form of (2α,5β,7β,10β,13α)-4- acetoxy-13-({(2R,3S)-3-[(tert-butoxycarbonyl) amino]-2-hydroxy-3-phenylpropanoyl}oxy)-l-hydroxy- 7,10-dimethoxy-9-oxo-5,20-epoxy-tax-ll-en-2-yl benzoate.

[0031] The crystalline compound of the present invention can be characterized by a number of techniques including X-ray powder diffraction (XRPD), infrared spectroscopy (IR), differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), and crystallography.

[0032] In some embodiments, the present invention provides the crystalline form of the compound characterized by an XRPD pattern substantially in accordance with that of Figure 2a, 3a, 4a, 5a, 6a, 7a, 8a, 9a, 10a, 11a, or 12a.

[0033] In other embodiments, the crystalline form of the compound is Form CI, characterized by an XRPD pattern that includes one or more peaks at 7.83, 8.91, 9.33, 10.21, 12.55, 12.85, 13.32, 13.56, 14.37, 14.7, 15.17, 15.6, 15.98, 16.54, 17.0, 17.25, 17.69, 18.28, 18.72, 19.42, 19.74, 20.0, 20.46, 21.06, 21.37, 21.74, 21.94, 22.17, 23.09, 23.49, 23.71, 23.97, 24.27, 24.78, 25.12, 25.82, 26.27, 26.91, 27.49, 27.74, 28.32, and 28.78 degrees 2Θ (± 0.1 degrees 2Θ (also referred to as 2-Theta)), wherein said XRPD pattern is made using CuK _al radiation. In another embodiment, the crystalline form of the compound is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.83, 8.91, 9.33, 10.21, 12.55, 12.85, 13.32, 13.56, 14.37, 14.7, 15.17, 15.6, 15.98, 16.54, 17.0, 17.25, 17.69, 18.28, 18.72, 19.42, 19.74, 20.0, 20.46, 21.06, 21.37, 21.74, 21.94, 22.17, 23.09, 23.49, 23.71, 23.97, 24.27, 24.78, 25.12, 25.82, 26.27, 26.91, 27.49, 27.74, 28.32, and 28.78 degrees 2Θ (± 0.1 degrees 2Θ). In some other embodiments, the crystalline form of the compound is characterized by an X PD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 2a with intensities greater than 50 cps (counts per second). In other embodiments, the crystalline form of the compound is characterized by an XRPD pattern

substantially in accordance with Figure 2a.

[0034] Crystalline Form CI is an anhydrous isopropanol solvate of cabazitaxel, as evidenced by Karl Fischer (KF) titration data and ^X H NMR spectroscopy. The IPA content of Form 1 was calculated by integrating a representative peak (-CH, δ 4.01 ppm) in the ¹ NMR spectrum, indicating a cabazitaxehlPA molar ratio of 1:0.9 (Figure 2e). Form CI contains approximately 0.1% water by weight as determined by KF titration. The thermal analysis of Form CI was conducted by TGA and DSC. The DSC endotherm for Form CI exhibits a broad endothermic transition with a maximum temperature at about 176°C (Figure 2c). This transition is attributed to desolvation and melting of the sample at temperatures over a range from about 158°C to about 178.5°C. TGA and hot stage microscopy (HSM) reflect the thermal behavior observed by DSC analysis. TGA, for example, shows a 6.7% weight loss at 125°C-200°C, followed by a sharp weight loss upon decomposition at about 220°C (Figure 2d).

[0035] In other embodiments, the crystalline form of the compound is Form C2, characterized by an XRPD pattern that includes one or more peaks at 7.89, 8.59, 10.1, 12.6, 12.84, 13.29, 13.77, 14.03, 14.93, 15.81, 16.67, 16.99, 17.37, 17.97, 18.85, 19.42, 20.08, 20.38, 20.8, 21.49, 21.96, 22.45, 22.76, 23.13, 23.93, 24.45, 24.84, 25.33, 26.01, 26.67, 27.09, 27.72, 28.2, 28.53, 29.33, 30.33, 30.81, 31.66, 32.08, 32.7, 33.27 and 34.03 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CUK _Q I radiation. In some embodiments, the crystalline form of the compound is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.89, 8.59, 10.1, 12.6, 12.84, 13.29, 13.77, 14.03, 14.93, 15.81, 16.67, 16.99, 17.37, 17.97, 18.85, 19.42, 20.08, 20.38, 20.8, 21.49, 21.96, 22.45, 22.76, 23.13, 23.93, 24.45, 24.84, 25.33, 26.01, 26.67, 27.09, 27.72, 28.2, 28.53, 29.33, 30.33, 30.81, 31.66, 32.08, 32.7, 33.27 and 34.03 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, the crystalline form of the compound is characterized by an XRPD pattern that includes peaks (in degrees 20 (± 0.1 degrees 2Θ)) as provided in Figure 3a with intensities greater than 40 cps. In other embodiments, the crystalline form of the compound is characterized by an XRPD pattern substantially in accordance with Figure 3a.

[0036] Crystalline Form C2 is also characterized by an IR spectrum substantially in accordance with Figure 3b, DSC/TGA traces substantially in accordance with Figure 3c, or a ¹ H NMR spectrum substantially in accordance with Figure 3d. [0037] In other embodiments, the crystalline form of the compound is Form C3, characterized by an XRPD pattern that includes one or more peaks at 7.8, 8.86, 10.16, 11.1, 12.62, 13.43, 14.41, 14.96, 15.28, 15.74, 16.45, 16.99, 17.66, 18.1, 18.52, 19.0, 19.68, 20.4, 21.07, 21.64, 21.9, 22.32, 22.84, 23.49, 23.98, 24.5, 25.07, 25.41, 25.69, 26.2, 26.69, 27.08, 27.53, 28.14, 29.49, 30.4, 30.86, 31.38, 31.96, 33.97, 34.34 and 35.32 degrees 2Θ (+ 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _a i radiation. In some embodiments, crystalline Form C3 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.8, 8.86, 10.16, 11.1, 12.62, 13.43, 14.41, 14.96, 15.28, 15.74, 16.45, 16.99, 17.66, 18.1, 18.52, 19.0, 19.68, 20.4, 21.07, 21.64, 21.9, 22.32, 22.84, 23.49, 23.98, 24.5, 25.07, 25.41, 25.69, 26.2, 26.69, 27.08, 27.53, 28.14, 29.49, 30.4, 30.86, 31.38, 31.96, 33.97, 34.34 and 35.32 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, the crystalline Form C3 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 4a with intensities greater than 30 cps. In some embodiments, the crystalline Form C3 is characterized by an XRPD pattern substantially in accordance with Figure 4a.

[0038] Crystalline Form C3 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 4b, DSC/TGA traces substantially in accordance with Figure 4c, or a ¹ H NMR spectrum substantially in accordance with Figure 4d.

[0039] In other embodiments, the crystalline form of the compound is Form C4, characterized by an XRPD diffraction pattern that includes one or more peaks at 8.5, 9.02, 9.94, 12.53, 13.12, 14.03, 14.93, 15.87, 16.81, 17.29, 17.79, 18.74, 19.62, 20.21, 20.65, 21.55, 22.03, 22.5, 23.3, 23.85, 24.36, 25.23, 25.91, 26.44, 26.86, 27.4, 27.82, 28.29, 28.87, 30.09, 31.0, 32.37, 33.06, 34.24, 34.99, 36.21, 36.52, 37.26, 37.92, 38.35 and 39.2 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _a i radiation. In some embodiments, the crystalline Form C4 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 8.5, 9.02, 9.94, 12.53, 13.12, 14.03, 14.93, 15.87, 16.81, 17.29, 17.79, 18.74, 19.62, 20.21, 20.65, 21.55, 22.03, 22.5, 23.3, 23.85, 24.36, 25.23, 25.91, 26.44, 26.86, 27.4, 27.82, 28.29, 28.87, 30.09, 31.0, 32.37, 33.06, 34.24, 34.99, 36.21, 36.52, 37.26, 37.92, 38.35 and 39.2 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, the Form C4 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 5a with intensities greater than 30 cps. In some embodiments, the crystalline Form C4 is characterized by an XRPD pattern substantially in accordance with Figure 5a.

[0040] Crystalline Form C4 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 5b, DSC/TGA traces substantially in accordance with Figure 5c, or a ¹ NMR spectrum substantially in accordance with Figure 5d. [0041] In other embodiments, the crystalline form of the compound is Form C5, characterized by an XRPD pattern that includes one or more peaks at 7.83, 8.78, 10.12, 11.11, 12.59, 12.83, 13.48, 14.29, 14.94, 15.19, 15.74, 16.53, 16.99, 17.58, 18.1, 18.39, 18.75, 19.1, 19.78, 20.36, 20.98, 21.7, 22.12, 22.46, 22.88, 23.26, 23.73, 23.99, 24.25, 24.92, 25.33, 25.85, 26.18, 26.7, 27.14, 27.73, 28.3, 28.59, 28.86, 29.49, 30.5 and 30.79 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _al radiation. In some embodiments, the crystalline Form C5 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.83, 8.78, 10.12, 11.11, 12.59, 12.83, 13.48, 14.29, 14.94, 15.19, 15.74, 16.53, 16.99, 17.58, 18.1, 18.39, 18.75, 19.1, 19.78, 20.36, 20.98, 21.7, 22.12, 22.46, 22.88, 23.26, 23.73, 23.99, 24.25, 24.92, 25.33, 25.85, 26.18, 26.7, 27.14, 27.73, 28.3, 28.59, 28.86, 29.49, 30.5 and 30.79 degrees 2Θ (+ 0.1 degrees 2Θ). In some embodiments, the Form C5 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 6a with intensities greater than 40 cps. In other embodiments, crystalline Form C5 is characterized by an XRPD pattern substantially in accordance with Figure 6a.

[0042] Crystalline Form C5 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 6b, DSC/TGA traces substantially in accordance with Figure 6c, or a ¹ H NMR spectrum substantially in accordance with Figure 6d.

[0043] In other embodiments, the crystalline form of the compound is Form C6, characterized by an XRPD pattern that includes one or more peaks at 7.77, 8.81, 10.13, 12.55, 12.78, 13.37, 14.26, 14.78, 15.14, 15.6, 16.43, 16.97, 17.57, 18.09, 18.42, 18.81, 19.52, 20.38, 20.96, 21.46, 21.91, 22.23, 22.82, 23.42, 23.94, 24.91, 25.31, 25.68, 25.95, 26.45, 26.69, 27.04, 27.42, 27.97, 28.19, 28.59, 29.36, 30.27, 30.82, 31.33, 31.68 and 32.75 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _al radiation. In some embodiments, crystalline Form C6 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.77, 8.81, 10.13, 12.55, 12.78, 13.37, 14.26, 14.78, 15.14, 15.6, 16.43, 16.97, 17.57, 18.09, 18.42, 18.81, 19.52, 20.38, 20.96, 21.46, 21.91, 22.23, 22.82, 23.42, 23.94, 24.91, 25.31, 25.68, 25.95, 26.45, 26.69, 27.04, 27.42, 27.97, 28.19, 28.59, 29.36, 30.27, 30.82, 31.33, 31.68 and 32.75 degrees 2Θ (+ 0.1 degrees 2Θ). In some embodiments, Form C6 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 7a with intensities greater than 40.eps. In other embodiments, the crystalline Form C6 is characterized by an XRPD pattern substantially in accordance with Figure 7a.

[0044] Crystalline Form C6 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 7b, DSC/TGA traces substantially in accordance with Figure 7c, or a 'H NMR spectrum substantially in accordance with Figure 7d. [0045] In other embodiments, the crystalline form of the compound is Form C7, characterized by an XRPD pattern that includes one or more peaks at 7.75, 8.57, 10.08, 11.03, 12.51, 12.8, 13.39, 14.01, 14.78, 15.58, 16.4, 16.93, 17.37, 17.9, 18.62, 19.0, 19.67, 20.31, 20.75, 21.55, 22.04, 22.64, 23.51, 23.97, 24.4, 25.19, 25.78, 26.05, 26.61, 26.98, 27.61, 28.09, 28.47, 29.26, 29.58, 30.25, 30.76, 31.4, 32.01, 32.36, 33.27 and 33.64 degrees 2Θ (+ 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK„i radiation. In another embodiments, crystalline Form C7 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.75, 8.57,

10.08, 11.03, 12.51, 12.8, 13.39, 14.01, 14.78, 15.58, 16.4, 16.93, 17.37, 17.9, 18.62, 19.0, 19.67, 20.31, 20.75, 21.55, 22.04, 22.64, 23.51, 23.97, 24.4, 25.19, 25.78, 26.05, 26.61, 26.98, 27.61, 28.09, 28.47, 29.26, 29.58, 30.25, 30.76, 31.4, 32.01, 32.36, 33.27 and 33.64 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, crystalline Form C7 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 8a with intensities greater than 40 cps. In other embodiments, crystalline Form C67 is characterized by the XRPD peaks substantially in accordance with Figure 8a.

[0046] Crystalline Form C7 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 8b, DSC/TGA traces substantially in accordance with Figure 8c, or a *H NMR spectrum substantially in accordance with Figure 8d.

[0047] In other embodiments, the crystalline form of the compound is Form C8, characterized by an XRPD pattern that includes one or more peaks at 7.92, 8.84, 9.4, 10.09, 12.54, 12.84, 13.47, 14.29,

14.9, 15.13, 15.75, 15.91, 16.16, 16.72, 16.91, 17.13, 17.56, 18.02, 18.2, 18.44, 18.93, 19.15, 19.8, 20.28, 20.9, 21.12, 21.68, 22.24, 22.46, 23.12, 23.41, 23.95, 24.52, 24.9, 25.27, 25.69, 26.09, 26.31, 26.76, 27.34, 28.0 and 28.32 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _al radiation. In some embodiments, crystalline Form C8 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.92, 8.84, 9.4, 10.09, 12.54, 12.84, 13.47, 14.29, 14.9, 15.13, 15.75, 15.91, 16.16, 16.72, 16.91, 17.13, 17.56, 18.02, 18.2, 18.44, 18.93, 19.15, 19.8, 20.28, 20.9, 21.12, 21.68, 22.24, 22.46, 23.12, 23.41, 23.95, 24.52, 24.9, 25.27, 25.69, 26.09, 26.31, 26.76, 27.34, 28.0 and 28.32 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, crystalline Form C8 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 9a with intensities greater than 40 cps. In some embodiments, the crystalline Form C8 is characterized by an XRPD pattern substantially in accordance with Figure 9a.

[0048] Crystalline Form C8 of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 9b, DSC TGA traces substantially in accordance with Figure 9c, or a *Η NMR spectrum substantially in accordance with Figure 9d. [0049] In other embodiments, crystalline Form C8b is formed by recrystallization from an aqueous DMSO solution. The XRPD pattern of Form C8b is shown in Figure 11a which is distinct from the XRPD pattern of Form C8. In some embodiments, the crystalline form of cabazitaxel is Form C8b, characterized by an XRPD pattern that includes one or more peaks at 7.19, 7.63, 8.16, 9.22, 10.14, 10.73, 11.66, 12.12, 12.78, 13.58, 14.00, 14.59, 15.14, 15.86, 16.40, 17.22, 17.54, 18.14, 18.94, 19.95, 20.45, 21.00, 21.24, 21.65, 22.13, 22.45, 23.17, 23.56, 23.90, 24.55, 25.25, 25.74, 26.74, 27.61, 28.49, 29.09, 29.74, 30.3, 31.00, 32.11, 32.63 and 33.14 degrees 2Θ (+ 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _al radiation. In some embodiments, crystalline Form C8b is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.19, 7.63, 8.16, 9.22, 10.14, 10.73, 11.66, 12.12, 12.78, 13.58, 14.00, 14.59, 15.14, 15.86, 16.40, 17.22, 17.54, 18.14, 18.94, 19.95, 20.45, 21.00, 21.24, 21.65, 22.13, 22.45, 23.17, 23.56, 23.90, 24.55, 25.25, 25.74, 26.74, 27.61, 28.49, 29.09, 29.74, 30.3, 31.00, 32.11, 32.63 and 33.14 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, Form C8b is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 20)) as provided in Figure 11a with intensities greater than 30 cps. In some embodiments, crystalline Form C8b is characterized by an XRPD pattern substantially in accordance with Figure 11a.

[0050] The differences between the XRPD patterns for Forms C8 and C8b indicate that the two crystalline forms are different, which is confirmed by the differences in the DSC and TGA data for the two forms. The DSC trace for Form C8b exhibits an endothermic transition with a maximum temperature at 66°C, corresponding to dehydration and desolvation, and an endothermic transition with a maximum temperature at 140°C, corresponding to sample melting (Figure 11c). TGA and hot stage microscopy of crystalline Form C8b confirm the thermal behavior observed by DSC. The TGA trace, for example, shows a 7.4% weight loss at 30°C-160°C followed by a sharp weight loss upon decomposition at about 220°C (Figure lid).

[0051] Form C8b is a monohydrate DMSO solvate, as shown by ¹ H NMR spectroscopy and KF titration. The DMSO content of Form C8b is calculated by integrating a representative DMSO peak (- S-CH ₃ , δ 2.61 ppm) in the H NMR spectrum, indicating a cabazitaxehDMSO molar ratio of 1:0.7-0.9 (Figure lie).

[0052] In other embodiments, the crystalline form of cabazitaxel is Form C9, characterized by an

XRPD pattern that includes one or more peaks at 8.2, 8.76, 9.33, 10.25, 10.99, 11.73, 12.24, 12.92,

14.04, 14.72, 15.33, 15.92, 16.46, 17.69, 18.42, 19.31, 19.79, 20.5, 21.42, 22.18, 22.54, 23.34, 23.69,

24.02, 24.73, 25.47, 25.78, 26.69, 27.44, 27.98, 28.62, 29.38, 29.76, 30.16, 30.44, 31.29, 32.02, 32.73,

33.78, 34.37, 34.98 and 36.01 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK _al radiation. In some embodiments, crystalline Form C9 is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 8.2, 8.76, 9.33, 10.25, 10.99, 11.73, 12.24, 12.92, 14.04, 14.72, 15.33, 15.92, 16.46, 17.69, 18.42, 19.31, 19.79, 20.5, 21.42, 22.18, 22.54, 23.34, 23.69, 24.02, 24.73, 25.47, 25.78, 26.69, 27.44, 27.98, 28.62, 29.38, 29.76, 30.16, 30.44, 31.29, 32.02, 32.73, 33.78, 34.37, 34.98 and 36.01 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments, Form C9 is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (+ 0.1 degrees 2Θ)) as provided in Figure 10a with intensities greater than 30 cps. In some embodiments, crystalline Form C9 is characterized by an XRPD pattern substantially in accordance with Figure 10a.

[0053] Crystalline Form C9 of the present invention is also characterized by an infrared spectrum substantially in accordance with Figure 10b, DSC/TGA traces substantially in accordance with Figure 10c, or a ¹ H NMR spectrum substantially in accordance with Figure lOd.

[0054] XRPD analysis confirmed that Form C9 is crystalline. Form C9 shows a 5% weight loss at 170°C by TGA analysis, while an endothermic transition at 157°C in the DSC trace corresponds to a melting point between 153 and 159°C (Figure 10c). Decomposition occurs at about 220°C, as indicated by the large weight loss observed by TGA around this temperature. Dynamic vapor sorption (DVS) analysis shows a non-perfectly reversible weight loss and gain upon changing humidity (over 2 cycles tested), consistent with loss of AcOH upon dehumidification. This was confirmed by ¹ H NMR spectroscopy after DVS analysis. KF titration of Form C9 indicated the presence of about 2.3% water.

[0055] In other embodiments, the crystalline form of the compound is Form C9p. The inventors discovered that Form C9 is, in fact, a mixture of a crystalline form and a novel acetic acid solvate. Form C9p, the acetic acid solvate, has now been prepared in pure form, substantially free of Form C9. The XRPD pattern of Form C9p is shown in Figure 12a. The XRPD pattern of Form C9p is clearly different from that of Form C9.

[0056] In some embodiments, the crystalline Form C9p is characterized by an XRPD pattern that includes one or more peaks at 7.24, 8.16, 8.69, 9.25, 10.21, 10.74, 11.73, 12.22, 12.87, 13.66, 14.12,

14.70, 15.25, 15.88, 16.34, 17.40, 17.72, 18.29, 19.10, 19.69, 20.07, 20.47, 21.04, 21.42, 21.71, 22.16, 22.53, 22.86, 23.40, 23.69, 23.91, 24.71, 25.37, 25.75, 26.68, 27.01, 27.57, 28.31, 28.67, 28.85, 29.32,

29.71, 30.43, 31.27, 32.19, 32.72, 33.42, 33.73, 34.25, 35.06, 36.02, 36.52, 37.48, 38.04, 38.77 and 39.48 degrees 2Θ (± 0.1 degrees 2Θ), wherein said XRPD pattern is made using CuK radiation. In some embodiments, the crystalline Form C9p is characterized by an XRPD pattern that includes two or more, three or more, four or more, or five or more peaks at 7.24, 8.16, 8.69, 9.25, 10.21, 10.74, 11.73, 12.22, 12.87, 13.66, 14.12, 14.70, 15.25, 15.88, 16.34, 17.40, 17.72, 18.29, 19.10, 19.69, 20.07, 20.47, 21.04, 21.42, 21.71, 22.16, 22.53, 22.86, 23.40, 23.69, 23.91, 24.71, 25.37, 25.75, 26.68, 27.01, 27.57, 28.31, 28.67, 28.85, 29.32, 29.71, 30.43, 31.27, 32.19, 32.72, 33.42, 33.73, 34.25, 35.06, 36.02, 36.52, 37.48, 38.04, 38.77 and 39.48 degrees 2Θ (± 0.1 degrees 2Θ). In some embodiments. Form C9p is characterized by an XRPD pattern that includes peaks (in degrees 2Θ (± 0.1 degrees 2Θ)) as provided in Figure 12a with intensities greater than 30 cps. In some embodiments, crystalline Form C9p is characterized by an XRPD pattern substantially in accordance with Figure 12a.

[0057] The crystalline Form C9p of the present invention is also characterized by an IR spectrum substantially in accordance with Figure 12b, DSC and TGA traces substantially in accordance with Figure 12c and Figure 12d, respectively, or a ¹ H NMR spectrum substantially in accordance with Figure 12e.

[0058] The crystalline compound of Form C9p is a monohydrate acetic acid solvate, as shown by ¹ H NMR spectroscopy and KF titration. The acetic acid content was calculated by integrating a representative peak (-CH ₃ , δ 2.11 ppm) in the ¹ H NMR spectrum (Figure 12e), indicating a cabazitaxehAcOH molar ratio of about 1:1-0.9. The water content of Form C9p, as determined by KF titration, is about 2% by weight. The thermal analysis of Form C9p was conducted using TGA and DSC. The DSC trace shows that Form C9p exhibits two endothermic transitions with maximum temperatures at 77°C and 147°C (Figure 12c). Dehydration and desolvation occurs before 150°C prior to melting at 150 ^o C-165°C. TGA and HSM reflected the thermal behavior observed in DSC analysis. The TGA trace, for example, shows about 8.0% weight loss at 30°C-160°C, followed by a sharp weight loss upon decomposition at about 220°C (Figure 12d).

[0059] In a related aspect, the present invention provides a process for preparing crystalline Form C9p of cabazitaxel including: a) slowly cooling a solution comprising cabazitaxel, acetic acid, and H ₂ 0 to form a

mixture comprising a solid material; b) filtering the mixture resulting from step a) and washing the isolated solid (also

known as a filter cake); and c) drying the isolated and washed solid resulting from step b) under vacuum with a nitrogen gas purge until the weight of the solid becomes constant.

[0060] The solution of step a) is cooled to a temperature such that a substantial amount of the crystalline form crystallizes from the solution with acceptable purity. In some embodiments, the solution of step a) may be cooled from any temperature at or above 50°C to any temperature at or below 40°C. The solution can be cooled, for example, from a temperature at or above 50°C to a temperature from 0°C to 40°C, or from 5°C to 30°C, or from 20°C to 25°C. In some embodiments, the solution of step a) may be cooled from any temperature at or above 20°C to any temperature at or below 10°C. The solution can be cooled, for example, from a temperature from 20°C to 25°C to a temperature from -80°C to 10°C , or from 0°C to 10°C, or from 0°C to 5°C. In some embodiments, washing in step b) is conducted using water. Drying in step c) is controlled so as to avoid partial or complete desolvation of the solvate, which can occur when the drying time is too long, the temperature is too high, or the pressure is too low. In some embodiments, the drying step is conducted until the molar ratio of cabazitaxel and AcOH is about 1:1. The drying step can be controlled in several ways including: i) by monitoring the weight of the solids being dried and terminating the drying when the weight change becomes small or the weight becomes constant; and/or ii) by monitoring the AcOH level of the solid being dried and terminating the drying when the molar ratio of AcOH to cabazitaxel is about 1 to 1. The level of AcOH in the solids being dried can be determined using analytical techniques known to one skilled in the art, including gas

chromatography (GC) and ¹ NMR spectroscopy. Figure 13 shows the weight change of cabazitaxel Form C9p during the drying of the solvate crystallised from aqueous AcOH as described in Example 13 below. In some embodiments, the drying in step c) is conducted at 60-200 torr. In some embodiments, the drying in step c) is conducted at 60-200 torr and 20-25°C. In some embodiments, the drying in step c) is conducted at 60-200 torr at ambient temperature, at about 22°C. The pressure is moderated with a nitrogen gas purge.

[0061] In another aspect, the invention provides a process for preparing crystalline Form C9p of cabazitaxel including: a) contacting solid cabazitaxel with acetic acid vapor under conditions sufficient to form an acetic acid solvate; and b) purging the resulting acetic acid solvate with a stream of nitrogen gas.

[0062] The solid cabazitaxel used in the process can be an anhydrous crystalline form or a solvate (such as an EtOAc solvate, for example). The contacting step a) can be achieved by placing cabazitaxel in a sintered glass Buchner funnel and passing a stream of acetic acid vapor through the narrow end of the Buchner funnel such that it passes through the cabazitaxel. This step can be conducted at ambient temperature. In some embodiments, contacting cabazitaxel with acetic acid vapor involves flowing the vapor in an atmosphere of nitrogen gas. The acetic acid vapor can be produced by passing a stream of nitrogen gas through a reservoir of acetic acid at ambient temperature. The level of acetic acid vapour in the nitrogen stream can be adjusted by changing the temperature of the reservoir of acetic acid and/or changing the flow rate of the nitrogen gas stream. The solid can then be purged with nitrogen gas to remove excess acetic acid that is not associated with the cabazitaxel solvate. The acetic acid content of the solvate can optionally be monitored during the nitrogen purging step to ensure that the molar ratio of cabazitaxel to acetic acid is about 1:1. The level of acetic acid in the solid material being purged with nitrogen can be determined using analytical techniques known to one skilled in the art, including GC and ¹ H NMR spectroscopy. The process yields solvate Form C9p as a monohydrate because it is exposed to the atmosphere during the contacting and purging steps.

[0063] Table 1 below outlines the conditions used for preparation of crystalline Forms Cl-C9p and Table 2 shows the positions of XPRD peaks for the novel forms.

Table 1. Crystalline forms of cabazitaxel

¹ Solvent key: DCM = dichloromethane; IPA = isopropanol (2-propanol; propan-2-ol); THF = tetrahydrofuran; PhMe = toluene; MEK = methyl ethyl ketone (EtCOMe); DEK = diethyl keton (Et ₂ CO); EtOAc = ethyl acetate; DMSO = dimethyl sulfoxide; AcOH = acetic acid Table 2. XRPD pattern data of crystalline forms of cabazitaxel

Form Degrees 2Θ (+/- 0.1 Degrees 2Θ)

7.83 8.91 9.33 10.21 12.55 12.85 13.32 13.56 14.37 14.7 15.17 15.6 15.98 16.54

CI 17 17.25 17.69 18.28 18.72 19.42 19.74 20 20.46 21.06 21.37 21.74 21.94 22.17

23.09 23.49 23.71 23.97 24.27 24.78 25.12 25.82 26.27 26.91 27.49 27.74 28.32 28.78

7.89 8.59 10.1 12.6 12.84 13.29 13.77 14.03 14.93 15.81 16.67 16.99 17.37 17.97

C2 18.85 19.42 20.08 20.38 20.8 21.49 21.96 22.45 22.76 23.13 23.93 24.45 24.84 25.33

26.01 26.67 27.09 27.72 28.2 28.53 29.33 30.33 30.81 31.66 32.08 32.7 33.27 34.03

7.8 8.86 10.16 11.1 12.62 13.43 14.41 14.96 15.28 15.74 16.45 16.99 17.66 18.1

C3 18.52 19 19.68 20.4 21.07 21.64 21.9 22.32 22.84 23.49 23.98 24.5 25.07 25.41

25.69 26.2 26.69 27.08 27.53 28.14 29.49 30.4 30.86 31.38 31.96 33.97 34.34 35.32

8.5 9.02 9.94 12.53 13.12 14.03 14.93 15.87 16.81 17.29 17.79 18.74 19.62 20.21

C4 20.65 21.55 22.03 22.5 23.3 23.85 24.36 25.23 25.91 26.44 26.86 27.4 27.82 28.29

28.87 30.09 31 32.37 33.06 34.24 34.99 36.21 36.52 37.26 37.92 38.35 39.2

7.83 8.78 10.12 11.11 12.59 12.83 13.48 14.29 14.94 15.19 15.74 16.53 16.99 17.58

C5 18.1 18.39 18.75 19.1 19.78 20.36 20.98 21.7 22.12 22.46 22.88 23.26 23.73 23.99

24.25 24.92 25.33 25.85 26.18 26.7 27.14 27.73 28.3 28.59 28.86 29.49 30.5 30.79

7.77 8.81 10.13' 12.55 12.78 13.37 14.26 14.78 15.14 15.6 16.43 16.97 17.57 18.09

C6 18.42 18.81 19.52 20.38 20.96 21.46 21.91 22.23 22.82 23.42 23.94 24.91 25.31 25.68

25.95 26.45 26.69 27.04 27.42 27.97 28.19 28.59 29.36 30.27 30.82 31.33 31.68 32.75

7.75 8.57 10.08 11.03 12.51 12.8 13.39 14.01 14.78 15.58 16.4 16.93 17.37 17.9

C7 18.62 19 19.67 20.31 20.75 21.55 22.04 22.64 23.51 23.97 24.4 25.19 25.78 26.05

26.61 26.98 27.61 28.09 28.47 29.26 29.58 30.25 30.76 31.4 32.01 32.36 33.27 33.64

C8 7.92 8.84 9.4 10.09 12.54 12.84 13.47 14.29 14.9 15.13 15.75 15.91 16.16 16.72 Form Degrees 2Θ (+/- 0.1 Degrees 2Θ)

16.91 17.13 17.56 18.02 18.2 18.44 18.93 19.15 19.8 20.28 20.9 21.12 21.68 22.24

22.46 23.12 23.41 23.95 24.52 24.9 25.27 25.69 26.09 26.31 26.76 27.34 28 28.32

7.19 7.63 8.16 9.22 10.14 10.73 11.66 12.12 12.78 13.58 14.00 14.59 15.14 15.86

C8b 16.40 17.22 17.54 18.14 18.94 19.95 20.45 21.00 21.24 21.65 22.13 22.45 23.17 23.56

23.90 24.55 25.25 25.74 26.74 27.61 28.49 29.09 29.74 30.30 31.00 32.11 32.63 33.14

8.2 8.76 9.33 10.25 10.99 11.73 12.24 12.92 14.04 14.72 15.33 15.92 16.46 17.69

C9 18.42 19.31 19.79 20.5 21.42 22.18 22.54 23.34 23.69 24.02 24.73 25.47 25.78 26.69

27.44 27.98 28.62 29.38 29.76 30.16 30.44 31.29 32.02 32.73 33.78 34.37 34.98 36.01

7.24 8.16 8.69 9.25 10.21 10.74 11.73 12.22 12.87 13.66 14.12 14.70 15.25 15.88

16.34 17.40 17.72 18.29 19.10 19.69 20.07 20.47 21.04 21.42 21.71 22.16 22.53 22.86

C9p

23.40 23.69 23.91 24.71 25.37 25.75 26.68 27.01 27.57 28.31 28.67 28.85 29.32 29.71

30.43 31.27 32.19 32.72 33.42 33.73 34.25 35.06 36.02 36.52 37.48 38.04 38.77 39.48

[0064] In another aspect, the present invention provides pharmaceutical compositions including one or more of the novel crystalline forms of cabazitaxel as well as one or more pharmaceutically acceptable excipients. Pharmaceutically acceptable excipients aid the administration of the solid forms to a subject and can promote absorption of the active agent by a subject. Pharmaceutical excipients useful in the present invention include, but are not limited to, binders, fillers, disintegrants, lubricants, coatings, sweeteners, flavors and colors. One of skill in the art will recognize that other pharmaceutical excipients are useful in the present invention.

EXAMPLES

[0065] The following examples are provided to further illustrate, but not to limit this invention. Example 1

Preparation of cabazitaxel crystalline Form CI

[0066] Cabazitaxel (O.lg) was dissolved in 0.6 mL of IPA, and an additional 0.4 mL of water were added with heating. The solution was cooled slowly to room temperature. The mixture was filtered and the collected solids were dried in vacuo at 20 to 30 °C for 3-4 days to give cabazitaxel Form CI as a white solid (melting point: 153.8-161.9°C).

Example 2

Preparation of cabazitaxel crystalline Form C2

[0067] A slurry of cabazitaxel (0.1 g) and 1 mL of EtOAc was heated at 70 to 80°C for about 2 hours. The mixture was cooled to room temperature and stirred for 2 days. The mixture was filtered and the collected solids were dried in a vacuum oven to give cabazitaxel Form C2 (melting point: 156.5-160.0°C).

Example 3

Preparation of cabazitaxel crystalline Form C2

[0068] Cabazitaxel Form C2 was also prepared by recrystallisation from EtOAc and n-heptane at room temperature. A solution of cabazitaxel (0.1 g), in EtOAc (3 mL) was prepared with heating, n- Heptane (6 mL) was added to precipitate the product. The mixture was filtered and the resulting solids were dried under vacuum oven to give a white solid of cabazitaxel Form C2.

Example 4

Preparation of cabazitaxel crystalline Form C3

[0069] A hot solution of cabazitaxel (0.1 g) in 0.4 mL of THF and 0.6 mL of n-heptane was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C3 as a white solid (melting point: 158.9-165.4°C).

Example 5

Preparation of cabazitaxel crystalline Form C4

[0070] A slurry of cabazitaxel (0.1 g) and 1 mL of toluene was heated at 70 to 80°C for about 2 hours and then cooled to room temperature and stirred for 2 days. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C4 as a white solid (melting point: 152.7-168.9°C). The cabazitaxel Form C4 was also prepared by recrystallisation of cabazitaxel (0.1 g) from 0.4 mL of THF and 1.2 mL of toluene at room temperature.

Example 6

Preparation of cabazitaxel crystalline Form C5

[0071] A hot solution of cabazitaxel (0.1 g) in 0.8 mL of methyl ethyl ketone and 0.8 mL of n- heptane was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C5 as a white solid (melting point: 159.0- 173.5°C).

Example 7

Preparation of cabazitaxel crystalline Form C6

[0072] A hot solution of cabazitaxel (0.1 g) in 1 mL of diethyl ketone and 0.7 mL of n-heptane was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C6 as a white solid (melting point: 153.2-164.2°C).

Example 8

Preparation of cabazitaxel crystalline Form C7

[0073] A hot solution of cabazitaxel (0.1 g) in 0.8 mL of diethyl carbonate and 0.5 mL of n-heptane was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C7 as a white solid (melting point: 161.2-180°C).

Example 9

Preparation of cabazitaxel crystalline Form C8

[0074] A hot solution of cabazitaxel (0.1 g) in 1.5 mL of DMSO and 0.5 mL of H ₂ 0 was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C8 as a white solid (melting point: 168.5-174.2°C).

Example 10

Preparation of cabazitaxel crystalline Form C9

[0075] A hot solution of cabazitaxel (0.1 g) in 1 mL of AcOH and 0.5 mL of H ₂ 0 was slowly cooled to room temperature. The mixture was filtered and the resulting solids were dried in a vacuum oven to give cabazitaxel Form C9 as a white solid (melting point: 152.5-159.3°C). Form C9 showed a 5% weight loss at 170°C by TGA analysis and an endotherm at 157°C was seen in the DSC trace, corresponding with the melting point of between 153 and 159°C. DVS analysis showed a non- perfectly reversible (over 2 cycles tested) weight loss and gain upon changing humidity. This was consistent with a loss of AcOH upon dehumification, which was confirmed by *H NMR spectroscopic analysis after the DVS test. KF analysis of Form C9 showed about 2.3% water.

Example 11

Preparation of cabazitaxel crystalline Form C8b

[0076] A hot solution of cabazitaxel (5.5 g, 6.6 mmol) in 45 mL of DMSO and 18 mL of H ₂ 0 was slowly cooled to between 20 to 25°C. The mixture was filtered and washed with H ₂ 0. The resulting solids were dried under vacuum (60-200 torr) at 20 to 25°C with a nitrogen gas purge to give cabazitaxel Form C8b as a white solid (5.3 g, 6.3 mmol; melting point: 125.2-144.8°C).

Example 12

Preparation of cabazitaxel crystalline Form C9p

[0077] A hot solution of cabazitaxel (6.2 g, 7.4 mmol) in 50 mL of AcOH and 42 mL of H ₂ 0 was slowly cooled to between 20 and 25°C. The mixture was filtered and washed with H ₂ 0. The resulting solids were dried under vacuum (60 to 200 torr) at 20-25°C with a nitrogen gas purge until the weight of filter cake became constant. The level of AcOH was about 1 molar equivalent with respect to cabazitaxel. Cabazitaxel Form C9p was obtained as a white solid (5.3 g, 6.3 mmol; melting point: 144-154.8°C).

Example 13

Preparation of cabazitaxel crystalline Form C9p

[0078] Anhydrous cabazitaxel (76.5 mg, 0.09 mmol) was placed in a sintered glass Buchner funnel. Acetic acid vapor was produced by streaming nitrogen gas through a reservoir of acetic acid, and the vapor was passed through the narrow end of the Buchner funnel so that it flowed though the cabazitaxel sample. The solid cabazitaxel was exposed to the acetic acid vapor at about 25°C for 17 hours. The material was then purged with nitrogen gas for about 30 minutes at about 25°C, providing Form C9p as a white solid (49 g, 0.06 mmol). Example 14

Preparation of cabazitaxel crystalline Form C9p

[0079] Cabazitaxel Form C2 (200 mg, 0.24 mmol) was exposed to acetic acid vapour as described in Example 14 for 22 hours. The solid material was then purged with nitrogen gas for about 30 minutes at about 25°C, providing Form C9p as a white solid (162 mg, 0.2 mmol).

[0080] Although the foregoing invention has been described in some detail by way of illustration and example for purposes of clarity of understanding, one of skill in the art will appreciate that certain changes and modifications may be practiced within the scope of the appended claims. In addition, each reference provided herein is incorporated by reference in its entirety to the same extent as if each reference was individually incorporated by reference. Where a conflict exists between the instant application and a reference provided herein, the instant application shall dominate.