Title:
CRYSTALLIZATION METHODS
Document Type and Number:
WIPO Patent Application WO/2013/033637
Kind Code:
A3
Abstract:
Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
Inventors:
ADAMS BRUCE E (US)
HUNTER AARON MUIR (US)
MOFFAT STEPHAN (GB)
HUNTER AARON MUIR (US)
MOFFAT STEPHAN (GB)
Application Number:
PCT/US2012/053527
Publication Date:
April 25, 2013
Filing Date:
August 31, 2012
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
ADAMS BRUCE E (US)
HUNTER AARON MUIR (US)
MOFFAT STEPHAN (GB)
ADAMS BRUCE E (US)
HUNTER AARON MUIR (US)
MOFFAT STEPHAN (GB)
International Classes:
H01L21/324
Foreign References:
| JP2003068644A | 2003-03-07 | |||
| US20110129959A1 | 2011-06-02 | |||
| US20060027809A1 | 2006-02-09 | |||
| US5304357A | 1994-04-19 |
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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