Title:
CRYSTALS, CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR FILM CONTAINING CRYSTALLINE OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE CONTAINING CRYSTALS AND/OR SEMICONDUCTOR FILM, AND SYSTEM INCLUDING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/204006
Kind Code:
A1
Abstract:
One embodiment of this invention is crystals containing a metal oxide that contains Ga and Mn and has a corundum structure.
Inventors:
MATSUDA TOKIYOSHI (JP)
SASAKI TAKAHIRO (JP)
HITORA TOSHIMI (JP)
TAKAHASHI ISAO (JP)
SASAKI TAKAHIRO (JP)
HITORA TOSHIMI (JP)
TAKAHASHI ISAO (JP)
Application Number:
PCT/JP2020/014693
Publication Date:
October 08, 2020
Filing Date:
March 30, 2020
Export Citation:
Assignee:
FLOSFIA INC (JP)
International Classes:
C01G45/00; C23C16/40; H01C7/04
Domestic Patent References:
| WO2019013136A1 | 2019-01-17 |
Foreign References:
| JP2018129500A | 2018-08-16 | |||
| CN107652973A | 2018-02-02 | |||
| CN105670622A | 2016-06-15 |
Other References:
HUANG, RONG ET AL.: "Microstructure of Mn-dopedĪ³-Ga2O3 epitaxial film on sapphire (0001) with room temperature ferromagnetism. Results and discussion", JOURNAL OF APPLIED PHYSICS, vol. 101, 2007, pages 063526, XP012098042
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