Title:
Cu-Ga ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2014/077110
Kind Code:
A1
Abstract:
A Cu-Ga alloy sputtering target which comprises 22 to 29 at% inclusive of Ga and a remainder made up by Cu and unavoidable impurities and has been dissolved and casted, said sputtering target being characterized by having an eutectoid structure composed of a mixed phase of a ζ phase, which is an intermetallic compound layer of Cu and Ga, and a γ phase, and also characterized in that the relational formula: D ≤ 7×C-150 is fulfilled wherein D (μm) represents the diameter of the γ phase and C (at%) represents the concentration of Ga. The sputtering target having the cast structure has such an advantage that the amount of a gaseous component such as oxygen can be reduced compared with that in a conventional sintered body target. A high-quality target having a cast structure, in which the content of oxygen is reduced and a segregative phase is dispersed, can be produced by solidifying a sputtering target having the above-mentioned cast structure continuously under the solidification conditions having a constant cooling rate.
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Inventors:
TAMURA TOMOYA (JP)
Application Number:
PCT/JP2013/079062
Publication Date:
May 22, 2014
Filing Date:
October 28, 2013
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C23C14/34; B22D11/00; B22D11/20; B22D11/22; B22D27/04; C22C1/02; C22C9/00
Foreign References:
| JP2012017481A | 2012-01-26 | |||
| JPS61133352A | 1986-06-20 | |||
| JP2010265544A | 2010-11-25 | |||
| JP2010280944A | 2010-12-16 |
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
Isamu Ogoshi (JP)
Isamu Ogoshi (JP)
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