CU-IN-GA-SE QUATERNARY ALLOY SPUTTERING TARGET - JX NIPPON MINING & METALS CORP

Title:

CU-IN-GA-SE QUATERNARY ALLOY SPUTTERING TARGET

Document Type and Number:

WIPO Patent Application WO/2011/058828

Kind Code:

A1

Abstract:

Provided is a quaternary alloy sputtering target comprising copper, indium, gallium, and selenium. Said quaternary alloy sputtering target is characterized by a composition represented by the composition formula CuIn1 − x Ga x Se2 −y (with x and y representing atomic ratios), a composition range of 0 < x ≤ 0.5 and 0 ≤ y ≤ 0.04, and a relative density of at least 90%. The provided CIGS quaternary alloy sputtering target has a high density, a low oxygen concentration, and a desired bulk resistance.

Inventors:

TAMURA TOMOYA (JP)
TAKAMI HIDEO (JP)
IKISAWA MASAKATSU (JP)
SAKAMOTO MASARU (JP)
SUZUKI RYO (JP)

Application Number:

PCT/JP2010/066820

Publication Date:

May 19, 2011

Filing Date:

September 28, 2010

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Assignee:

JX NIPPON MINING & METALS CORP (JP)
TAMURA TOMOYA (JP)
TAKAMI HIDEO (JP)
IKISAWA MASAKATSU (JP)
SAKAMOTO MASARU (JP)
SUZUKI RYO (JP)

International Classes:

C23C14/34; H01L31/04

Foreign References:

CN101397647A	2009-04-01
JP2008163367A	2008-07-17
JP2008138232A	2008-06-19
JP2009203499A	2009-09-10
JP2008163367A	2008-07-17

Other References:

TAKAHIRO UMINO ET AL.: "Kagobutsu Taiyo Denchi-yo Sputter Target", ELECTRONIC MATERIALS AND PARTS, 1 November 2009 (2009-11-01), pages 42 - 44, XP008153127
C.SURYANARAYANA ET AL.: "Synthesis and processing of a Cu-In-Ga-Se sputtering target", THIN SOLID FILMS, vol. 332, 1998, pages 340 - 344, XP027471800
THIN SOLID FILMS, vol. 332, 1998, pages 340 - 344
ELECTRONIC MATERIAL, November 2009 (2009-11-01), pages 42 - 45

Attorney, Agent or Firm:

OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)

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