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Title:
CU-NI ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/203258
Kind Code:
A1
Abstract:
A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L × 100 is in the range of 35% to 65%, where L is the total grain boundary length as the length of the boundary formed between crystals for which the orientation difference between adjacent crystal grains is in the range of 5° to 180°, and LT is the twin crystal boundary length as the length of a grain boundary which is an orientation difference for which each of three lattice points is confirmed when the (111) plane and the (110) plane of a face-centered cubic crystal are rotated about a rotational axis.

Inventors:
KATO SHINJI (JP)
IO KENSUKE (JP)
Application Number:
PCT/JP2019/016435
Publication Date:
October 24, 2019
Filing Date:
April 17, 2019
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C9/06; C22C19/03; C22F1/08; C22F1/10; C22C1/04; C22F1/00
Domestic Patent References:
WO2015162986A12015-10-29
WO2018207770A12018-11-15
Foreign References:
JP2015079941A2015-04-23
JP2013120411A2013-06-17
JP2012046771A2012-03-08
JP2011162835A2011-08-25
JP2011161479A2011-08-25
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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