Title:
CU-NI ALLOY SPUTTERING TARGET
Document Type and Number:
WIPO Patent Application WO/2019/203258
Kind Code:
A1
Abstract:
A Cu-Ni alloy sputtering target including Ni, the remainder comprising Cu and unavoidable impurities, wherein the twinning ratio defined by the expression LT/L × 100 is in the range of 35% to 65%, where L is the total grain boundary length as the length of the boundary formed between crystals for which the orientation difference between adjacent crystal grains is in the range of 5° to 180°, and LT is the twin crystal boundary length as the length of a grain boundary which is an orientation difference for which each of three lattice points is confirmed when the (111) plane and the (110) plane of a face-centered cubic crystal are rotated about a rotational axis.
Inventors:
KATO SHINJI (JP)
IO KENSUKE (JP)
IO KENSUKE (JP)
Application Number:
PCT/JP2019/016435
Publication Date:
October 24, 2019
Filing Date:
April 17, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C22C9/06; C22C19/03; C22F1/08; C22F1/10; C22C1/04; C22F1/00
Domestic Patent References:
| WO2015162986A1 | 2015-10-29 | |||
| WO2018207770A1 | 2018-11-15 |
Foreign References:
| JP2015079941A | 2015-04-23 | |||
| JP2013120411A | 2013-06-17 | |||
| JP2012046771A | 2012-03-08 | |||
| JP2011162835A | 2011-08-25 | |||
| JP2011161479A | 2011-08-25 |
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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