Title:
CURED RESIN FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/026403
Kind Code:
A1
Abstract:
One aspect of the present disclosure relates to a method for manufacturing a semiconductor device comprising the following steps in the stated order: forming a resin film by applying a resin composition on a substrate and drying said film; heating the resin film to obtain a cured resin film; forming a metal seed layer by sputtering on the surface of the cured resin film; forming, on the surface of the metal seed layer, a resist pattern having openings for forming wiring patterns; forming, by electrolytic plating, a metal layer having a wiring pattern in which the wiring width is 3 µm or less and the distance between wires is 3 µm or less on the surface of the metal seed layer in a region exposed from the resist pattern; removing the resist pattern; and removing the metal seed layer exposed by removal of the resist pattern, the crosslink density of the resin cured film being 0.1×10–3 to 110×10–3 mol/cm3.
Inventors:
IMAZU YUKI (JP)
TOBA MASAYA (JP)
AOKI YU (JP)
HAMANO YOSHIMI (JP)
TOBA MASAYA (JP)
AOKI YU (JP)
HAMANO YOSHIMI (JP)
Application Number:
PCT/JP2021/031179
Publication Date:
March 02, 2023
Filing Date:
August 25, 2021
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L23/14
Domestic Patent References:
| WO2021039630A1 | 2021-03-04 |
Foreign References:
| JP2015170713A | 2015-09-28 | |||
| JP2018150440A | 2018-09-27 | |||
| JP2016111171A | 2016-06-20 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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