Title:
CURED RESIN FILM, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/027115
Kind Code:
A1
Abstract:
One aspect of the present disclosure relates to a method for producing a semiconductor device, the method sequentially comprising, in the following order: a step in which a resin composition is applied to a substrate and dried thereon, thereby forming a resin film; a step in which the resin film is heated, thereby obtaining a cured resin film; a step in which a metal seed layer is formed on the surface of the cured resin film by sputtering; a step in which a resist pattern that has an opening for the formation of a wiring pattern is formed on the surface of the metal seed layer; a step in which a metal layer that has a wiring pattern, which has a wiring width of 3 µm or less and an inter-wiring distance of 3 µm or less, is formed on a region of the surface of the metal seed layer by means of electrolytic plating, the region being exposed from the resist pattern; a step in which the resist pattern is removed; and a step in which the metal seed layer that is exposed by the removal of the resist pattern is removed. With respect to this method for producing a semiconductor device, the crosslink density of the cured resin film is 0.1 × 10-3 to 110 × 10-3 mol/cm3.
Inventors:
IMAZU YUKI (JP)
TOBA MASAYA (JP)
AOKI YU (JP)
HAMANO YOSHIMI (JP)
TOBA MASAYA (JP)
AOKI YU (JP)
HAMANO YOSHIMI (JP)
Application Number:
PCT/JP2022/031898
Publication Date:
March 02, 2023
Filing Date:
August 24, 2022
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L23/14
Domestic Patent References:
| WO2021039630A1 | 2021-03-04 |
Foreign References:
| JP2015170713A | 2015-09-28 | |||
| JP2018150440A | 2018-09-27 | |||
| JP2016111171A | 2016-06-20 | |||
| JP2000313787A | 2000-11-14 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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