Title:
CURRENT CONTROL SEMICONDUCTOR ELEMENT AND CURRENT CONTROL DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2016/121452
Kind Code:
A1
Abstract:
Provided are a current control semiconductor element that decreases the drive current dependency of a sense ratio and increases the accuracy of current detection by a sense MOSFET, and a current control device using the same. A current control semiconductor element includes, disposed on the same semiconductor chip, a main MOSFET for current drive and a sense MOSFET connected in parallel with the main MOSFET to detect a main MOSFET current. The main MOSFET and the sense MOSFET are formed so as to be surrounded by trench grooves with an insulating film embedded therein. The trench groove surrounding the main MOSFET has a width smaller than the width of the trench groove surrounding the sense MOSFET.
Inventors:
WADA SHINICHIROU (JP)
Application Number:
PCT/JP2016/050423
Publication Date:
August 04, 2016
Filing Date:
January 08, 2016
Export Citation:
Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H01L27/08; H01L21/336; H01L21/76; H01L21/8234; H01L27/088; H01L29/78; H01L29/786
Domestic Patent References:
| WO2012002100A1 | 2012-01-05 |
Foreign References:
| JP2000022140A | 2000-01-21 | |||
| JPH0574802A | 1993-03-26 | |||
| JP2000217347A | 2000-08-04 |
Other References:
See also references of EP 3252815A4
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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