TAMURA MASAHIRO
ODA TOSHIAKI
YAMAZAKI YUKIYOSHI
NISHIKAWA MASAHIRO
DOI TAKESHI
KYOTANI YOSHINORI
WO1999042446A1 | 1999-08-26 | |||
WO2002050061A1 | 2002-06-27 | |||
WO1997044329A1 | 1997-11-27 |
EP0774257A2 | 1997-05-21 |
1. | A process for forming metal coating for blocking EMI (electromagnetic interference), characterized by setting a target(l) and a basic materialO) facing each other in a vacuum chamber(23); placing ρoles(N) and (S) of multiple magnets alternatingly over said target(l); by connecting the cathode of a power to said target(l) and the anode thereof to said plastic basic materialO) respectively and by supplying electric power and pressure thereto to generate a plasma discharge in a vacuum chamber; having the resulting ions hit said target(l) to emit conductive deposition material; and by making said emitted atom coat said plastic basic materialO). |
2. | A process for forming metal coating for blocking EMI in accordance with Claim 1, wherein said target(l) is of either a single metal of Al, Ag, Cu, or Ni, or an alloy of multiple metals, AlAg, CuNi, or CuAu. |
3. | A process for forming metal coating for blocking EMI in accordemce with Claim 2, wherein said target(l) of metals is of a plate made of different multiple metals disposed in a line row of a certain length or of a plate on which other metal plates are intermittently attached on one metal plate. |
4. | A process for forming metal coating for blocking EMI in accordance with claims 1 through 3, wherein a single, multilayer or the alloy metal thin coating layer is formed continuously without disrupting the vacuum of the vacuum chamber. |
BACKGROUND OF INVENTION
Field of Invention
The present invention relates to a process for cutting off the so-called
electromagnetic interference (EMI, hereinafter), much criticized nowadays, by
means of coating of a single metal or an alloy of such materials of good
conductivity as Al, Cu, Ag, Au, Ni, etc., on non-conductive plastic generally
used for cases of eletronics goods such as computers, making use of a vacuum
sputtering process with the use of plasma which forms a thin coating, said
process being an improvement with excellent adhesiveness, and with less of the
disuniformity in thickness of the coating layer caused by irregularity of the
surface of the basic material that is coated on.
Description of Prior Art
As for the conventional art regarding blocking EMI a process is in use,
wherein non-conductive plastic is plated with Ni or Cu by a non-electrolytic
plating process but, by this method, not merely is a selective overlaying of a
single surface difficult but serious environmental pollution arises calling
forth a speedy development of alternative technologies. In the industrially
more advanced countries, a vacuum depositing technique has widely been
industrialized and technologies for EMI blocking are being studied in earnest,
but no greatly satisfactory achievements are reported on in terms of tight
adhesion or adjustment of uniformity of thickness.
In the present invention coating by magnetic sputtering is utilized
sputtering being used the most widely in the electronics industry these days.
The greatest advantage of the sputtering technique is that the deposition
process is performed at low temperature and the chemically quantitative ratios
are easily adjustable, whereupon the technique is extremely suitable in coating
material for electronics products, where surface dispersion is of much concern.
Because plasma etching which controls the shape of the basic material also can
be done in the same vacuum container without disruption of the vacuum, it is
esteemed as an indispensable technique in high-density integrated circuits.
In preparation of the thin coating of electrically resistive material, contact
material, magnetic material, memory discs, si for solar cells, and in
preparation of the thin coating of superconductors, of which much concern
arises these days, the sputtering technique is in wide use. In the field of
optical industry, too, it serves as vital technique in the reflexive or
transparent coating of laser, colored glass for architecture, lenses for
spectacles or cameras, etc., etc. and in many other fields of industry such as
chemical and decorative work also, but it has not ever been used in a process
for coating for blocking EMI.
SUMMARY OF INVENTION
The present invention relates to a process for laminating by the use of a
magnetic sputtering technique, the basic material of plastic, with a thin layer
having tight adhesiveness and good uniformity and blocking EMI effectively.
The techniques of vacuum deposition utilized plasma include the sputtering,
ion-plating, PACVD (plasma assisted chemical vapor deposition), etc., against
heat, with conductive metals the sputtering is the most appropriate technique,
and in the present invention also sputtering is mainly used.
BRIEF DESCRIPTION OF DRAWINGS
Fig. 1 is a schematic diagram showing, in rough, exchange of the momentum
generated by the sputtering.
Fig. 2 is a graph showing a yield of the sputtering in accordance with
incidence energy of the Ar + ion.
Fig. 3,(a) represents the incidence angle of the projecting Ions against
the target.
Fig. 3,(b) is a graph showing the variance of the sputtering yield by the
varied angles of incidence.
Fig. 4 is a schematic diagram of a tri-polar sputtering process.
Fig. 5 is a schematic diagram of the process for laminating with an alloy
utilizing the magnetic sputtering according to the present
invention.
Figs. 6, 7, 8 and 9 are another examples of the present invention showing
the process for laminating with the targets composed of different
metals components.
DETAILED DESCRIPTION OF THE INVENTION
Now referring to the accompanying drawing, the process for laminating
plastics with metals for blocking EMI by utilizing the magnetic sputtering in
accordance with the present invention is described in detail below.
The sputtering technique is a process of physical deposition. The
principle is as follows: when a certain pressure and electric power are given
inside a vacuum chamber a plasmatic discharge of electricity occurs around a
target(l), whereupon the cations that existed in the area of the discharge beat
the surface of said target!1) by electrical force.
At this time the kinetic energy of the beating cations is transmitted to the
atoms(5) that exist on larger than the binding energy of the atoms of the
beaten target(l) the atoms of said target(l) are emitted. This phenomenon of
sputtering is comparable to a collision of elastomers, and can be illustrated
simply as in Fig. 1. In short, when ions(2) which have a mass Mi are shot
toward said target ato s(5) which have a mass Mt and a velocity Vi, the
velocity Vi' of said ions after the collision will be, according to the law of
momentum conservation;
Vi' = {(Mi - Mt) / (Mi + Mt)} Vi (1)
and Vt' the velocity of the emitted target atoms, can be represented as the
equation;
Vt' = {(2Mi) / (Mi + Mt)) Vi • (2),
Provided that the ions' incidence angle against the surface of the target is
90 degrees, and the colliding beads are all to be completly elastomers.
According to the formulae above, after the collision of the projecting ions,
said ions will penetrate the surface of said target when the velocity thereof
is Mi > Mt, and they will move in a direction opposite to that of the
projection when it is Mi < Mt. But in actual sputtering, it is hardly possible
to represent the motion of the emitted atoms as simple equations as were given
above, the colliding energy of the projecting ions is propagated to the other
atoms existing around, divided into the primary and Low Energy Knockon to give
emission atoms, as shown in Fig. 1. In conventional sputtering deposition,
the kinetic energy of emitted atoms is about 10-40eV, reportedly about 50-100
times as high as the kinetic energy of the depositing atoms in vacuum
deposition.
For understanding phenomena of the sputtering it is required to look into
regarding the sputtering yield, which means the number of target atoms emitted
by one ion being projected toward the surface of the target from the plasma,
and which is represented as the following equation;
S = K{(Mi - Mt) / (Mi + Mt)2 (I / Uo) a (Mt / Mi)} (3)
Wherein K stands for a constant ranging from 0.1 to 0.3; E, energy of the
incidence ion; Uo, the binding energy of the target atoms; and (Mt/Mi), a
simple increasing function of Mt/Mi.
In Mt/Mi = 2, as a typical ratio quantity the a is about 0.3. Fig. 2 shows
the various sputtering yields of the target materials according to the
incidence energy of the Ar* ion, it teaches that it varies depending upon the
sorts of target materials. The sputtering yield also varies depending upon the
incidence angles of the projecting ion as shown in a graph of Fig. 3,(b) and is
exhibited as the sec Θ of the incidence angle θ shown in Fig 3,(a). When
the incidence angle increases, however, it begins to depart from the functions
of Sec θ; and, after showing the maximum value of the sputtering yield, its
value drops to 0 at =_τr/2 where in the incidence angle and the surface of the
target is in equilibrium. Most ions are projected perpendicular to the
surface of the target, only a very small amount of ions are projected in
smaller angles by an effect of the dispersion of gas.
The simplest sputtering system is a plain bipolar device as described above
wherein l-20mA/cm 2 and the pressure is about 10 torr. However such plain
bipolar method has a defect that the speed of deposition is too slow.
Therefore its industrialization is accompanied by much difficulties. Thus
after the development of such plain bipolar technique much research has been
done to increase the deposition speed, and a tripolar sputtering technique has
been developed as a result. Such tripolar method is of that another pole is
added to the two to adjust the thermal electron release source and the flow of
the released thermal electrons.
Fig. 4 shows a scheme of the tripolar method. As the soure releasing
thermal electrons a tungsten filament is used, and such improved method is
possible to increase the speed of deposition since the density of plasma can be
raised by means of releas of thermal electons.
In addition to said tripolar process there also are other sputtering methods
as follows: The radio frequency sputtering making use of nonconductive
targets; the reactive sputtering making use of conductive targets and inducing
reactive gas, which forms a nonconductive thin layer; and the magnetic
sputtering.
Of said sputtering methods, applying plasma, the one most suitable for
forming conductive thin coatings over plastic for blocking EMI, is that of the
magnetic sputtering.
The adhesive force of the thin EMI-blocking layer over plastic depends
largely on the process for pre-treatment of the basic material, and in the
process of the present invention the following two types of pre-treatment
processes are given to the basic material:
(1) Removal of fat with a neutral detergent → washing with water → removal
of fat with a neutral detergent → washing with water —» drying in warm air;
(2) Removal of fat with a neutral detergent → washing with water → Removal
of fat with NaOH(40%, 30~50 * C) → washing with water → drying in warm air.
It was proved in both cases that adhesive force of adhesive tapes was
excellent by test and in actual production lines the removal of fat with a
neutral detergent of (1) above, is widely utilized since the process is fairly
simple.
After the pre-treatment of the basic material is finished the formation of
the metal depositing layer by the sputtering, which is the main objective of
the present invention, is undertaken.
Fig. 5 shows the circuit diagram of the magnetic sputtering device, in
which the target 1 and the basic plastic material 9 are set opposite to each
other in the vacuum chamber 23; poles N and S of magnets 16 are alternatingly
positioned on said targets l; the anode 8 is connected with basic plastic
material 9 and the cathode 7 to the target. Using said magnetic sputtering
device, when power is supplied the plas ic discharge occurs wherein ions 10 hit
said target 1 to emit conductive deposition ion 12 and the resulting ion 12 is
coated over said basic plastic material 9.
Since under the same pressure the probability for electrons to hit neutral
atoms rises in proportion to the moving distance of the eletrons, their spiral
movement around the target increases the range of their movement greatly and
enhances the probability of their ionization to exhibit a fast speed for
deposition; and the highest ionization probability and high density of plasma
band exhibit at the region where electric and magnetic force lines cross one
another perpendicularly to occur the regional sputtering phenomena.
In the present invention a single metal such as Al, Ag and Ni or different
multiple metals, such as Al-Ag, Ag-Cu, Cu-Au are used as the metal target.
Now referring to accompanying drawings examples of each thin layer is
embodied in detail as follows;
Example of thin layer of an alloy Al-Ag in accordance with the present
invention is illustrated in Figures 6 and 7. Either an Al metal target 18 and
Ag metal target 19 are, as shown in Fig. 6, aligned for a certain length in the
vacuum chamber 23, and ions of metal elements are deposited by sputtering over
the surface of the basic material to form alloy thin layer by moving a moving
device 17 of base material moving parallelly so as to face the target, or in a
non-parallel process, a target is composed of Ag 19 and Al 18, as shown in Fig.
7, and the basic material 9 moves to form alloy thin layer opposite the
resulting target to form a mixed metal thin layer.
The thin layer coated with alloys such as Al-Ag, Cu-Au, etc. has advantages
as follows:
The vacuum can be maintained without disruption since the metal ions are
mixed and coated while the base material moves in the same vacuum chamber; the
rate of Ag being contained in the alloy thin layer can be adjusted with ease
because the locations of Ag target 19 and the basic material 9 can be adjusted
optionally; and the possibility of disruption of adhesion on the interface of
Al-Ag which could tend to happen in the conventional multi-layer coating can be
removed.
While in the coating of a single metal Al, the deposition is carried out
with 4.5w/cm 2 target power for 5 minutes to give a conductivity with linear
resistance less than 1 Ω/cm, it is possible, in the case of a thin coating of
Al-Ag alloy, to lower the linear resistance to 0.7 Ω/cm with less thick layer
than that of a single Al coating, and it is also possible to deposit the Al-Ag
alloy without any disruption of the vacuum.
In the present invention, the role of Ag is to raise the conductivity while
decreasing the thickness of the coating, it can minimize the variation by heat
of plastic to give an EMI-blocking thin coating with excellent adhesion and in
a result, the remaining stress of the coating can be minimized. In the case
of Ag a very thin coating less than 0.5;um, was formed because the high prices
of the material itself. In the present invention, Al-Ag thin layer displayed
an optimal thickness and excellent properties.
The coating of a single metal, Cu, displayed properties similar to Al, and
the good conductive thin coating layer of less than 1 Ω/cm is given by
deposition with 4.7w/cm 2 target power for five minutes.
The coating over plastic by the magnetic sputtering method described above
was excellent in adhesion. Results of a test of adhesion comparing the Al
coatings by the conventional vacuum overlaying technique with that of the
sputtering of the present invention are given in table 1.
Table 1 : 3/*m Al thin layer deposited on plastic for a computer case.
The advantage of the coating by the magnetic sputtering technique of the
present invention is to be found in its quite high speed of deposition and the
little rise in temperature of the basic material, making it convenient to form
deposition coating on basic material of plastic or polymer series generally
weak to heat, while it is also possible to adjust the ingredients of the
depositing layer at will thanks to the use of multiple targets.
The deposition velocity of 10,000A/min is obtained, by the magnetic
sputtering technique of the present invention, and the forming of a thin
coating layer on the basic material is possible, with out causing generation of
heat, by controlling the flow of the electric current to both poles or the
basic material, the magnetic sputtering technique of the present invention is a
very good process for forming EMI-blocking thin layers on plastic used for
production of cases for computers and other electronics goods parts.