Title:
DAMASCENE EXTREME ULTRAVIOLET LITHOGRAPHY ALTERNATIVE PHASE SHIFT PHOTOMASK AND METHOD OF MAKING
Document Type and Number:
WIPO Patent Application WO2003019291
Kind Code:
A3
Abstract:
A photolithography mask is disclosed. The mask comprises a pattern layer that is selectively formed on a substrate in a photomask pattern. Next, a multilayer stack is formed on the pattern layer and the substrate. The multilayer stack is comprised of a plurality of pairs of thin films. Finally, an absorptive layer is disposed in trenches formed within the multilayer stack. The absorptive layer is absorptive of an EUV illuminating radiation. Further, the trenches are located substantially over the borders between the pattern layer and the substrate.
Inventors:
YAN PEI-YANG
LO FU-CHANG
LO FU-CHANG
Application Number:
PCT/US2002/024659
Publication Date:
April 10, 2003
Filing Date:
August 01, 2002
Export Citation:
Assignee:
INTEL CORP (US)
International Classes:
G03F1/24; G03F1/30; G03F1/26; (IPC1-7): G03F1/14; G03F1/00
Foreign References:
| US5328784A | 1994-07-12 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02 29 February 2000 (2000-02-29)
Download PDF: