Title:
DELAY CIRCUIT AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/206636
Kind Code:
A1
Abstract:
A delay circuit (100) and a semiconductor memory. The delay circuit (100) comprises a temperature compensation control module (10) and a delay module (20), wherein the temperature compensation control module (10) is used for generating a target temperature compensation control signal according to a received initial control signal, a real-time ambient temperature signal, a temperature coefficient compensation enabling signal and a temperature coefficient control signal; and the delay module (20) is connected to the temperature compensation control module (10), and is used for generating, according to the received target temperature compensation control signal and an initial delay signal, a target delay signal which has been subjected to temperature compensation. The delay time of the target delay signal generated by the delay circuit (100) can be dynamically compensated for according to the real-time ambient temperature signal collected by a temperature sensor, such that the situation where the delay time of an actually generated target delay signal greatly differs from the delay time of a required target delay signal due to a temperature change is avoided, thereby improving the stability and accuracy of signal transmission, and improving the performance and reliability of an integrated circuit.
Inventors:
YANG YU (CN)
Application Number:
PCT/CN2022/092997
Publication Date:
November 02, 2023
Filing Date:
May 16, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H04J3/06; G05F1/567
Foreign References:
| US20050135430A1 | 2005-06-23 | |||
| US20120286890A1 | 2012-11-15 | |||
| CN112994665A | 2021-06-18 | |||
| CN109491438A | 2019-03-19 | |||
| CN1869615A | 2006-11-29 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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