Title:
DEVICE AND METHOD FOR MANUFACTURING NITROGEN-DOPED MONOCRYSTALLINE SILICON
Document Type and Number:
WIPO Patent Application WO/2023/051702
Kind Code:
A1
Abstract:
A device and method for manufacturing nitrogen-doped monocrystalline silicon, where the device includes: an air pressure control apparatus, the air pressure control apparatus being used for reducing the pressure of a gas near the liquid surface of a nitrogen-doped silicon melt; a crystal pulling apparatus, the crystal pulling apparatus using a direct method for drawing a monocrystalline silicon rod from the nitrogen-doped silicon melt.
Inventors:
HENG PENG (CN)
LI YANG (CN)
XU PENG (CN)
LI YANG (CN)
XU PENG (CN)
Application Number:
PCT/CN2022/122630
Publication Date:
April 06, 2023
Filing Date:
September 29, 2022
Export Citation:
Assignee:
XIAN ESWIN MATERIAL TECHNOLOGY CO LTD (CN)
International Classes:
C30B15/04; C30B29/06
Domestic Patent References:
| WO2009025336A1 | 2009-02-26 |
Foreign References:
| US3501406A | 1970-03-17 | |||
| JP2002154896A | 2002-05-28 | |||
| JP2012031023A | 2012-02-16 | |||
| CN102162124A | 2011-08-24 | |||
| CN113862776A | 2021-12-31 |
Attorney, Agent or Firm:
DRAGON INTELLECTUAL PROPERTY LAW FIRM (CN)
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