Title:
DEVICE FOR TREATMENT WITH PLASMA AND SUBSTRATE-TREATING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2024/043166
Kind Code:
A1
Abstract:
The present invention provides a technique which inhibits etching rate from decreasing. Provided is a device for treatment with a plasma including: a chamber; a substrate-supporting part disposed inside the chamber; a gas feed port which is connected to a source of a treatment gas including hydrogen fluoride gas and through which the treatment gas is fed to the chamber; and a plasma generation part configured so as to generate a plasma from the treatment gas. At least some of the interior of the chamber is made of a material including at least one member selected from the group consisting of carbon, tungsten, molybdenum, ruthenium, titanium nitride, samarium, and yttrium.
Inventors:
SUDA RYUTARO (JP)
TANAKA KOKI (JP)
HORI KENTA (JP)
MURAKAMI TOMO (JP)
FUNADA SHUJI (JP)
HARASHIMA TAKUYA (JP)
NAGAI RYU (JP)
KAKO TAKASHI (JP)
NIIYAMA KOJI (JP)
TANAKA KOKI (JP)
HORI KENTA (JP)
MURAKAMI TOMO (JP)
FUNADA SHUJI (JP)
HARASHIMA TAKUYA (JP)
NAGAI RYU (JP)
KAKO TAKASHI (JP)
NIIYAMA KOJI (JP)
Application Number:
PCT/JP2023/029709
Publication Date:
February 29, 2024
Filing Date:
August 17, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; C23C4/08; H05H1/46
Foreign References:
| JP2021090039A | 2021-06-10 | |||
| JP2001244200A | 2001-09-07 | |||
| JP2021510934A | 2021-04-30 | |||
| JP2021174985A | 2021-11-01 | |||
| JP2013123028A | 2013-06-20 | |||
| US20140113453A1 | 2014-04-24 | |||
| JP2001244202A | 2001-09-07 | |||
| JP2006222158A | 2006-08-24 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
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