DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION

WIPO Patent Application WO2005003605

A3

Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.

MAULA JARMO ILMARI (FI)
LESKINEN HANNU (FI)
LANG TEEMU (FI)
KUOSMANEN PEKKA (FI)
HAERKOENEN KARI (FI)
AITCHISON BRADLEY J (US)

PCT/US2004/020916

July 21, 2005

June 28, 2004

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PLANAR SYSTEMS INC (US)
MAULA JARMO ILMARI (FI)
LESKINEN HANNU (FI)
LANG TEEMU (FI)
KUOSMANEN PEKKA (FI)
HAERKOENEN KARI (FI)
AITCHISON BRADLEY J (US)

F16K7/14; F16K31/06; F16K49/00; (IPC1-7): F16K49/00; F16K31/02

US5520001A	1996-05-28
US5383646A	1995-01-24
US4826132A	1989-05-02
US6659421B1	2003-12-09
US6241213B1	2001-06-05
US6179925B1	2001-01-30
US6585823B1	2003-07-01
US5386849A	1995-02-07
US5112027A	1992-05-12
US6073648A	2000-06-13
US4273028A	1981-06-16
US4513945A	1985-04-30

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