DIRECT BACKSIDE SELF-ALIGNED CONTACT - INT BUSINESS MACHINES CORPORATION

Title:

DIRECT BACKSIDE SELF-ALIGNED CONTACT

Document Type and Number:

WIPO Patent Application WO/2024/082734

Kind Code:

A1

Abstract:

A semiconductor structure is provided including a backside source/drain contact structure that contacts a source/drain region of a transistor and overlaps a portion of a tri-layered bottom dielectric isolation structure that is located on a backside of the transistor. The presence of the tri-layered bottom dielectric isolation structure prevents shorting between the gate structure of the transistor and the backside source/drain contact structure, and thus improves process margin.

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Inventors:

XIE RUILONG (US)
FROUGIER JULIEN (US)
ZHANG CHEN (US)
SUNG MIN GYU (US)
WU HENG (US)

Application Number:

PCT/CN2023/108138

Publication Date:

April 25, 2024

Filing Date:

July 19, 2023

Export Citation:

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Assignee:

INT BUSINESS MACHINES CORPORATION (US)
IBM CHINA CO LTD (CN)

International Classes:

H01L29/78; H01L21/768; H01L23/535

Attorney, Agent or Firm:

CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)

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